Backward diode behavior in oxygen-excessive manganite-titanate p-n junction
文献类型：期刊论文
| 作者 | Xie, YW ; Sun, JR ; Guo, DF ; Shen, BG ; Zhang, XY |
| 刊名 | EPL
 |
| 出版日期 | 2009 |
| 卷号 | 87期号:5 |
| ISSN号 | 0295-5075 |
| 通讯作者 | Xie, YW: Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China. |
| 中文摘要 | Junctions composed of La(0.9)Ca(0.1)MnO(3) film and 1wt% Nb-doped SrTiO(3) substrate were fabricated using pulsed-laser deposition technique. Several junctions were annealed in O(2) flow at 900 degrees C for 10 hours. Studies on the current-voltage characteristics of these junctions showed that the annealed junctions exhibit strong backward diode behavior that takes place for small bias (within +/- 1.05V) and gradually vanishes with increasing temperature up to 50K. As a comparison, no backward diode behavior was observed in the unannealed junctions. The depression of leakage current is believed to be responsible for the backward diode behavior in the present junctions. Copyright (C) EPLA, 2009 |
| 收录类别 | SCI |
| 资助信息 | NSFC [10804094, 10674169, 50821001, 50832007]; NSF of Hebei Province [A2009000339]; Plan of Natural Science of Educational Department of Hebei Province [2008146] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/34117]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xie, YW,Sun, JR,Guo, DF,et al. Backward diode behavior in oxygen-excessive manganite-titanate p-n junction[J]. EPL,2009,87(5). |
| APA | Xie, YW,Sun, JR,Guo, DF,Shen, BG,&Zhang, XY.(2009).Backward diode behavior in oxygen-excessive manganite-titanate p-n junction.EPL,87(5). |
| MLA | Xie, YW,et al."Backward diode behavior in oxygen-excessive manganite-titanate p-n junction".EPL 87.5(2009). |
入库方式： OAI收割
来源：物理研究所
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