Band structure engineering of multinary chalcogenide topological insulators
文献类型：期刊论文
| 作者 | Chen, SY ; Gong, XG ; Duan, CG ; Zhu, ZQ ; Chu, JH ; Walsh, A ; Yao, YG ; Ma, J ; Wei, SH |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2011 |
| 卷号 | 83期号:24 |
| 关键词 | HGTE QUANTUM-WELLS SINGLE DIRAC CONE SURFACE ALLOYS BI2TE3 PHASE |
| ISSN号 | 1098-0121 |
| 通讯作者 | Chen, SY: E China Normal Univ, Lab Polar Mat & Devices, Shanghai 200241, Peoples R China. |
| 中文摘要 | Topological insulators (TIs) have been found in strained binary HgTe and ternary I-III-VI2 chalcopyrite compounds such as CuTlSe2 which have inverted band structures. However, the nontrivial band gaps of these existing binary and ternary TIs are limited to small values, usually around 10 meV or less. In this work, we reveal that a large nontrivial band gap requires the material to have a large negative crystal field splitting Delta(CF) at the top of the valence band and a moderately large negative s-p band gap E-g(s-p). These parameters can be better tuned through chemical ordering in multinary compounds. Based on this understanding, we show that a series of quaternary I-2-II-IV-VI4 compounds, including Cu2HgPbSe4, Cu2CdPbSe4, Ag2HgPbSe4, and Ag2CdPbTe4, are TIs, in which Ag2HgPbSe4 has the largest TI band gap of 47 meV because it combines the optimal values of Delta(CF) and E-g(s-p). |
| 收录类别 | SCI |
| 资助信息 | NSF of Shanghai [10ZR1408800]; NSF of China [10934002, 10950110324, 10974231]; Shanghai Municipality; MOE; Special Funds for Major State Basic Research; Fundamental Research Funds for the Central Universities; CC of ECNU; PCSIRT; 973 Program [2007CB924900]; US Department of Energy [DE-AC36-08GO28308] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/34135]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, SY,Gong, XG,Duan, CG,et al. Band structure engineering of multinary chalcogenide topological insulators[J]. PHYSICAL REVIEW B,2011,83(24). |
| APA | Chen, SY.,Gong, XG.,Duan, CG.,Zhu, ZQ.,Chu, JH.,...&Wei, SH.(2011).Band structure engineering of multinary chalcogenide topological insulators.PHYSICAL REVIEW B,83(24). |
| MLA | Chen, SY,et al."Band structure engineering of multinary chalcogenide topological insulators".PHYSICAL REVIEW B 83.24(2011). |
入库方式： OAI收割
来源：物理研究所
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