Bias dependence of the tunneling magnetoresistance in double spin-filter junctions
文献类型：期刊论文
| 作者 | Xie, ZQ ; Li, BZ |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2003 |
| 卷号 | 93期号:11页码:9111 |
| 关键词 | INSULATOR (SEMICONDUCTOR)/FERROMAGNET JUNCTIONS ELECTRIC-FIELD CONDUCTANCE BARRIER |
| ISSN号 | 0021-8979 |
| 通讯作者 | Xie, ZQ: Chinese Acad Sci, Inst Phys, Beijing 10080, Peoples R China. |
| 中文摘要 | With the intention of providing reference materials for research, manufacture and application of magnetoresistance devices, we calculate the dependences of tunneling magnetoresistance (TMR) in a NM/FI/FI/NM. double spin-filter junction (DSFJ) on the bias (voltage) and, secondarily, on the thickness, barrier height and molecular field of FIs [here the NM and FI-represent the nonmagnetic electrode and the ferromagnetic insulator (semiconductor) spacer, respectively]. Our results show that for the TMR of the DSFJ besides its very high value it does not decrease monotonously and rapidly with a rise of bias, but increases slowly at first and then decreases after a maximum value is reached. This feature is in distinct contrast to the ordinary magnetic tunnel junction FM/NI/FM and thus facilitates the application of the DSFJ as a magnetoresistance device [here FM and NI denote the ferromagnetic electrode and the nonmagnetic insulator (semiconductor) spacer, respectively]. The influence of the thickness, barrier height and, especially, the molecular field of FIs on TMR and its bias dependence is also not negligible. (C) 2003 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/34216]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xie, ZQ,Li, BZ. Bias dependence of the tunneling magnetoresistance in double spin-filter junctions[J]. JOURNAL OF APPLIED PHYSICS,2003,93(11):9111. |
| APA | Xie, ZQ,&Li, BZ.(2003).Bias dependence of the tunneling magnetoresistance in double spin-filter junctions.JOURNAL OF APPLIED PHYSICS,93(11),9111. |
| MLA | Xie, ZQ,et al."Bias dependence of the tunneling magnetoresistance in double spin-filter junctions".JOURNAL OF APPLIED PHYSICS 93.11(2003):9111. |
入库方式： OAI收割
来源：物理研究所
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