Bilayer-by-bilayer etching of 6H-GaN(0001) with Cl
文献类型：期刊论文
| 作者 | Kuwano, S ; Xue, QZ ; Asano, Y ; Fujikawa, Y ; Xue, QK ; Nakayama, KS ; Nagao, T ; Sakurai, T |
| 刊名 | SURFACE SCIENCE
 |
| 出版日期 | 2004 |
| 卷号 | 561期号:2-3页码:L213 |
| 关键词 | SCANNING-TUNNELING-MICROSCOPY MOLECULAR-BEAM EPITAXY SURFACE GAN RECONSTRUCTIONS GAN(0001) GROWTH |
| ISSN号 | 0039-6028 |
| 通讯作者 | Sakurai, T: Tohoku Univ, IMR, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan. |
| 中文摘要 | Etching of Ga-polar GaN(0 0 0 1) surface with Cl has been studied using scanning tunneling microscopy. Three different processes in the thermally activated Cl reaction, i.e., the removal of Ga-fluid, the formation of alternative zigzag and smooth steps, and the initiation of triangle pits on the terrace that take place at different temperatures, are identified. The atom removal is found to proceed via a bilayer-by-bilayer mode on the GaN surface, and the underlying mechanism is discussed in terms of the surface atomic structure. (C) 2004 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/34233]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Kuwano, S,Xue, QZ,Asano, Y,et al. Bilayer-by-bilayer etching of 6H-GaN(0001) with Cl[J]. SURFACE SCIENCE,2004,561(2-3):L213. |
| APA | Kuwano, S.,Xue, QZ.,Asano, Y.,Fujikawa, Y.,Xue, QK.,...&Sakurai, T.(2004).Bilayer-by-bilayer etching of 6H-GaN(0001) with Cl.SURFACE SCIENCE,561(2-3),L213. |
| MLA | Kuwano, S,et al."Bilayer-by-bilayer etching of 6H-GaN(0001) with Cl".SURFACE SCIENCE 561.2-3(2004):L213. |
入库方式： OAI收割
来源：物理研究所
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