Boron carbide and silicon oxide hetero-nanonecklaces via temperature modulation
文献类型：期刊论文
| 作者 | Tian, JF ; Wang, XJ ; Bao, LH ; Hui, C ; Liu, F ; Yang, TZ ; Shen, CM ; Gao, HJ |
| 刊名 | CRYSTAL GROWTH & DESIGN
 |
| 出版日期 | 2008 |
| 卷号 | 8期号:9页码:3160 |
| 关键词 | NANOWIRE BUILDING-BLOCKS CDSE QUANTUM DOTS CARBON NANOTUBES GROWTH PHOTOLUMINESCENCE FABRICATION NANORODS HETEROSTRUCTURES NANOSTRUCTURES ARRAYS |
| ISSN号 | 1528-7483 |
| 通讯作者 | Gao, HJ: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100080, Peoples R China. |
| 中文摘要 | Boron carbide and silicon oxide (BCSiO) hetero-nanonecklaces have been successfully synthesized via temperature modulation. This kind of nanostructure was formed by coating 100-500 nm silicon oxide nanoballs onto 20-30 nm boron carbide nanowires. Synthetic analysis shows that a two-step model at different temperatures and the poor wettability between boron carbide and silicon oxide play important roles in the growth of hetero-nanonecklaces. Photoluminescence of the synthesized BCSiO hetero-nanonecklaces shows enhanced visible light emissions at 637.6 nm, which is attributed to the small size of the boron carbide nanowires and defects induced by silicon oxide sheaths. |
| 收录类别 | SCI |
| 资助信息 | National Science Foundation of China [90101025, 60571045]; National "863" [2007AA03Z305]; "973" project of China [2007CB935503] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/34295]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Tian, JF,Wang, XJ,Bao, LH,et al. Boron carbide and silicon oxide hetero-nanonecklaces via temperature modulation[J]. CRYSTAL GROWTH & DESIGN,2008,8(9):3160. |
| APA | Tian, JF.,Wang, XJ.,Bao, LH.,Hui, C.,Liu, F.,...&Gao, HJ.(2008).Boron carbide and silicon oxide hetero-nanonecklaces via temperature modulation.CRYSTAL GROWTH & DESIGN,8(9),3160. |
| MLA | Tian, JF,et al."Boron carbide and silicon oxide hetero-nanonecklaces via temperature modulation".CRYSTAL GROWTH & DESIGN 8.9(2008):3160. |
入库方式： OAI收割
来源：物理研究所
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