Boron-doped silicon nanowires grown by plasma-enhanced chemical vapor deposition
文献类型：期刊论文
| 作者 | Zeng, XB ; Liao, XB ; Bo, W ; Diao, HW ; Dai, ST ; Xiang, XB ; Chang, XL ; Xu, YY ; Hu, ZH ; Hao, HY ; Kong, GL |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2004 |
| 卷号 | 53期号:12页码:4410 |
| 关键词 | LIQUID-SOLID MECHANISM NANOSTRUCTURES |
| ISSN号 | 1000-3290 |
| 通讯作者 | Zeng, XB: Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China. |
| 中文摘要 | Boron-doped ( B-doped) silicon nanowires have been successfully synthesized by plasma-enhanced chemical vapor deposition (PECVD) at 440degreesC using silane as the Si source, diborane( B2H6) as the dopant gas and An as the catalyst. It is desirable to extend this technique to the growth of silicon nanowire pn junctions because PECVD enables immense chemical reactivity. |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/34304]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zeng, XB,Liao, XB,Bo, W,et al. Boron-doped silicon nanowires grown by plasma-enhanced chemical vapor deposition[J]. ACTA PHYSICA SINICA,2004,53(12):4410. |
| APA | Zeng, XB.,Liao, XB.,Bo, W.,Diao, HW.,Dai, ST.,...&Kong, GL.(2004).Boron-doped silicon nanowires grown by plasma-enhanced chemical vapor deposition.ACTA PHYSICA SINICA,53(12),4410. |
| MLA | Zeng, XB,et al."Boron-doped silicon nanowires grown by plasma-enhanced chemical vapor deposition".ACTA PHYSICA SINICA 53.12(2004):4410. |
入库方式： OAI收割
来源：物理研究所
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