Buffer layer-enhanced magnetic field effect in manganite-based heterojunctions
文献类型：期刊论文
| 作者 | Lu, WM ; Sun, JR ; Chen, YZ ; Shang, DS ; Shen, BG |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2009 |
| 卷号 | 95期号:23 |
| ISSN号 | 0003-6951 |
| 通讯作者 | Sun, JR: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Influence of magnetic field on the rectifying property of the La(0.67)Ca(0.33)MnO(3)/LaMnO(3)/SrTiO(3):0.05 wt %Nb heterojunctions has been studied. In addition to an enhanced magnetic response of the current-voltage characteristics, a field-induced increase in junction resistance, which is an effect different from that in the junctions without the LaMnO(3) layer, is observed. The positive magnetoresistance is further found to show a systematic variation with the thickness of the LaMnO(3) layer (t), growing rapidly with the increase of layer thickness and getting a maximum of similar to 91% at t=4 nm (T = 50 K and Delta H = 5 T). Analysis of the current-voltage and capacitance-voltage characteristics indicates a field-induced growth of interfacial barrier, which is responsible for the abnormal effect observed here. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3273375] |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China; National Fundamental Research of China; Chinese Academy of Sciences |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/34363]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Lu, WM,Sun, JR,Chen, YZ,et al. Buffer layer-enhanced magnetic field effect in manganite-based heterojunctions[J]. APPLIED PHYSICS LETTERS,2009,95(23). |
| APA | Lu, WM,Sun, JR,Chen, YZ,Shang, DS,&Shen, BG.(2009).Buffer layer-enhanced magnetic field effect in manganite-based heterojunctions.APPLIED PHYSICS LETTERS,95(23). |
| MLA | Lu, WM,et al."Buffer layer-enhanced magnetic field effect in manganite-based heterojunctions".APPLIED PHYSICS LETTERS 95.23(2009). |
入库方式： OAI收割
来源：物理研究所
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