Bulk GaN single crystals: a reinvestigation of growth mechanism using Li3N flux
文献类型：期刊论文
| 作者 | Wang, G ; Jian, JK ; Song, B ; Chen, XL ; Wang, WJ ; Song, YT |
| 刊名 | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
 |
| 出版日期 | 2006 |
| 卷号 | 85期号:2页码:169 |
| 关键词 | VAPOR-PHASE EPITAXY NA FLUX MORPHOLOGY DIODES |
| ISSN号 | 0947-8396 |
| 通讯作者 | Chen, XL: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | The GaN growth mechanism using Li3N flux was reinvestigated by designing a new experiment that allowed us to grow GaN simultaneously under varying Ga/Li3N molar ratios. The results confirm the two-step reactions involved in the Ga-Li3N system: Li3N+Ga-->Li3GaN2+Li (1) and Li3GaN2+Ga-->GaN+Li (2). It is found that reaction (2) is the main cause leading to small GaN crystals in the products. Larger GaN crystals, however, can grow by a different pathway. The growing process is concerned with the formation of Li-Ga-N melt by dissolving Li3GaN2 in Li-Ga melt after reaction (1). GaN crystals up to 3 mm grow from the Li-Ga-N melt upon cooling on the GaN particles by reaction (2). Our results suggest that it is necessary to restrain reaction (2) by choosing proper Ga/Li3N molar ratios so as to obtain GaN crystals in larger size. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/34373]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, G,Jian, JK,Song, B,et al. Bulk GaN single crystals: a reinvestigation of growth mechanism using Li3N flux[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2006,85(2):169. |
| APA | Wang, G,Jian, JK,Song, B,Chen, XL,Wang, WJ,&Song, YT.(2006).Bulk GaN single crystals: a reinvestigation of growth mechanism using Li3N flux.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,85(2),169. |
| MLA | Wang, G,et al."Bulk GaN single crystals: a reinvestigation of growth mechanism using Li3N flux".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 85.2(2006):169. |
入库方式： OAI收割
来源：物理研究所
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