Bulk GaN single crystals: growth mechanism by using Li3N and Ga
文献类型：期刊论文
| 作者 | Wang, WJ ; Song, YT ; Yuan, WX ; Cao, YG ; Wu, X ; Chen, XL |
| 刊名 | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
 |
| 出版日期 | 2004 |
| 卷号 | 78期号:1页码:29 |
| 关键词 | NA FLUX WURTZITE GAN PRESSURE |
| ISSN号 | 0947-8396 |
| 通讯作者 | Chen, XL: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Colorless transparent hexagonal GaN platelet crystals with a size of 1-4mm have been grown under more moderate conditions (800degreesC, 1 similar to 2 atm) using Li3N and Ga. Growth mechanism of this method was revealed by a series of experiment results. The morphologies of GaN single crystals were observed with an optical microscope and a scanning electron microscope. The crystal was characterized by X-ray powder diffraction and Raman scattering spectrum. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/34375]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, WJ,Song, YT,Yuan, WX,et al. Bulk GaN single crystals: growth mechanism by using Li3N and Ga[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2004,78(1):29. |
| APA | Wang, WJ,Song, YT,Yuan, WX,Cao, YG,Wu, X,&Chen, XL.(2004).Bulk GaN single crystals: growth mechanism by using Li3N and Ga.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,78(1),29. |
| MLA | Wang, WJ,et al."Bulk GaN single crystals: growth mechanism by using Li3N and Ga".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 78.1(2004):29. |
入库方式： OAI收割
来源：物理研究所
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