Carbon nanotube transistors with graphene oxide films as gate dielectrics
文献类型：期刊论文
| 作者 | Fu, WY ; Liu, L ; Wang, WL ; Wu, MH ; Xu, Z ; Bai, XD ; Wang, EG |
| 刊名 | SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
 |
| 出版日期 | 2010 |
| 卷号 | 53期号:5页码:828 |
| ISSN号 | 1674-7348 |
| 通讯作者 | Bai, XD: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Carbon nanomaterials, including the one-dimensional (1-D) carbon nanotube (CNT) and two-dimensional (2-D) graphene, are heralded as ideal candidates for next generation nanoelectronics. An essential component for the development of advanced nanoelectronics devices is processing-compatible oxide. Here, in analogy to the widespread use of silicon dioxide (SiO2) in silicon microelectronic industry, we report the proof-of-principle use of graphite oxide (GO) as a gate dielectrics for CNT field-effect transistor (FET) via a fast and simple solution-based processing in the ambient condition. The exceptional transistor characteristics, including low operation voltage (2 V), high carrier mobility (950 cm(2)/V-1 s(-1)), and the negligible gate hysteresis, suggest a potential route to the future all-carbon nanoelectronics. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [10874218, 50725209, 60621091]; Ministry of Science and Technology [2009DFA01290, 2006AA03Z402, 2007AA03Z353, 2007CB936203]; Chinese Academy of Sciences |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/34475]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Fu, WY,Liu, L,Wang, WL,et al. Carbon nanotube transistors with graphene oxide films as gate dielectrics[J]. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,2010,53(5):828. |
| APA | Fu, WY.,Liu, L.,Wang, WL.,Wu, MH.,Xu, Z.,...&Wang, EG.(2010).Carbon nanotube transistors with graphene oxide films as gate dielectrics.SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,53(5),828. |
| MLA | Fu, WY,et al."Carbon nanotube transistors with graphene oxide films as gate dielectrics".SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY 53.5(2010):828. |
入库方式： OAI收割
来源：物理研究所
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