Carbon nitride films on diamond layers and their thermal behavior
文献类型：期刊论文
| 作者 | Guo, JD ; Ma, XC ; Zhao, RW ; Wang, EG |
| 刊名 | JOURNAL OF MATERIALS SCIENCE
 |
| 出版日期 | 2000 |
| 卷号 | 35期号:9页码:2209 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION C3N4 THIN-FILMS PHOTOELECTRON-SPECTROSCOPY ELECTRONIC-STRUCTURE NITROGEN GRAPHITE |
| ISSN号 | 0022-2461 |
| 通讯作者 | Guo, JD: Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | A CN/diamond composite structure on silicon substrate was obtained by a two-step technique in preparing polycrystalline diamond layers by microwave plasma assisted chemical vapor deposition and then CN films by reactive rf magnetron sputtering. The samples were annealed at different temperatures in the range of 200 to 800 degrees C, respectively. All the as-grown and annealed CN films, which fully covered the diamond underlayer with the formation of a rather adhesive interface, exhibited amorphous nature uniquely. X-ray photoelectron spectroscopy and energy-dispersive x-ray studies both revealed that the nitrogen concentration of the films decreases after annealed at high temperature. Infrared spectra also suggested the thermal modifications on the content and structure of the CN films. The electric resistivity varies in a large range as the annealing temperature increasing, and confirmed the bonding configuration in favor of a graphite-like structure at high temperature. (C) 2000 Kluwer Academic Publishers. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/34481]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Guo, JD,Ma, XC,Zhao, RW,et al. Carbon nitride films on diamond layers and their thermal behavior[J]. JOURNAL OF MATERIALS SCIENCE,2000,35(9):2209. |
| APA | Guo, JD,Ma, XC,Zhao, RW,&Wang, EG.(2000).Carbon nitride films on diamond layers and their thermal behavior.JOURNAL OF MATERIALS SCIENCE,35(9),2209. |
| MLA | Guo, JD,et al."Carbon nitride films on diamond layers and their thermal behavior".JOURNAL OF MATERIALS SCIENCE 35.9(2000):2209. |
入库方式： OAI收割
来源：物理研究所
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