Carrier density and confined polaron effects in the photoluminescence of fresh and oxidized porous silicon
文献类型：期刊论文
| 作者 | Zou, BS ; Dai, JH ; Xie, SS |
| 刊名 | SURFACE AND INTERFACE ANALYSIS
 |
| 出版日期 | 2004 |
| 卷号 | 36期号:2页码:166 |
| 关键词 | QUANTUM DOTS VISIBLE LUMINESCENCE STATES LIGHT SI ORIGIN OXYGEN LAYERS |
| ISSN号 | 0142-2421 |
| 通讯作者 | Zou, BS: Chinese Acad Sci, Inst Phys, Nanophys & Nanodevice Lab, Beijing 100080, Peoples R China. |
| 中文摘要 | In this report the temperature-dependent photoluminescence spectra, Fourier transform infrared (FTIR) spectra and time-resolved FTIR spectra of freshly prepared porous silicon and oxidized porous silicon are examined. The experimental results indicate that there is a gradual transformation of electronic states with ageing in air, because ageing led to the surface oxidation and size reduction of Si nanostructures. This surface variation from hydrogen to oxygen during ageing leads to a red shift of the emissions. A clear quantum-confinement effect exists for both H- and O-capped porous silicon but the emissions in O-capped porous silicon show clear polaronic nature. The photoinduced polaron is evidenced by the time-resolved FTIR results. A reversible H-detrapping process in silicon wafer occurs with temperature, which influences the conduction of silicon wafer and the photoluminescence of as-prepared porous silicon due to the carrier density changes. Copyright (C) 2004 John Wiley Sons, Ltd. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/34491]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zou, BS,Dai, JH,Xie, SS. Carrier density and confined polaron effects in the photoluminescence of fresh and oxidized porous silicon[J]. SURFACE AND INTERFACE ANALYSIS,2004,36(2):166. |
| APA | Zou, BS,Dai, JH,&Xie, SS.(2004).Carrier density and confined polaron effects in the photoluminescence of fresh and oxidized porous silicon.SURFACE AND INTERFACE ANALYSIS,36(2),166. |
| MLA | Zou, BS,et al."Carrier density and confined polaron effects in the photoluminescence of fresh and oxidized porous silicon".SURFACE AND INTERFACE ANALYSIS 36.2(2004):166. |
入库方式： OAI收割
来源：物理研究所
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