Carrier dynamics in low-temperature-grown AlxGa1-xAs/GaAs multiple quantum wells
文献类型:期刊论文
作者 | Li, CY ; Wang, L ; Fu, PM ; Zhang, ZG ; Wei, YF ; Zhao, SP ; Yang, QS ; Han, YJ ; Guo, LW ; Huang, Q |
刊名 | PHYSICAL REVIEW B
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出版日期 | 2003 |
卷号 | 67期号:13 |
关键词 | GAAS HETEROSTRUCTURES BEATS LIFETIME SEMICONDUCTORS |
ISSN号 | 1098-0121 |
通讯作者 | Li, CY: Chinese Acad Sci, Inst Phys, Lab Opt Phys, POB 603, Beijing 100080, Peoples R China. |
中文摘要 | Femtosecond pump-probe spectroscopy has been used to study ultrafast relaxation dynamics in low-temperature-grown AlGaAs/GaAs multiple quantum wells (MQW's). It was found that the carrier lifetime of as-grown MQW's was much longer than those that had been subjected to 30 s rapid thermal annealing. The carrier lifetimes of samples annealed to three different temperatures (600, 700, and 800 degreesC) were measured and that annealed to 700 degreesC was found to be shorter than that of the other two. We also observed the quantum beats of heavy-hole and light-hole exciton in as-grown AlGaAs/GaAs MQW's at low temperature, but not in the annealed samples. The beat frequency was 3.7 THz, corresponding to the energy difference between heavy- and light-hole excitons in the as-grown AlGaAs/GaAs MQW's. As the temperature rose, the beats disappeared. We gave two possible reasons to explain this phenomenon. We tuned the central frequency of femtosecond Ti:sapphire laser through the resonant frequencies of heavy holes and light holes, while the phase of the quantum beats did not change. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-17 |
源URL | [http://ir.iphy.ac.cn/handle/311004/34492] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Li, CY,Wang, L,Fu, PM,et al. Carrier dynamics in low-temperature-grown AlxGa1-xAs/GaAs multiple quantum wells[J]. PHYSICAL REVIEW B,2003,67(13). |
APA | Li, CY.,Wang, L.,Fu, PM.,Zhang, ZG.,Wei, YF.,...&Huang, Q.(2003).Carrier dynamics in low-temperature-grown AlxGa1-xAs/GaAs multiple quantum wells.PHYSICAL REVIEW B,67(13). |
MLA | Li, CY,et al."Carrier dynamics in low-temperature-grown AlxGa1-xAs/GaAs multiple quantum wells".PHYSICAL REVIEW B 67.13(2003). |
入库方式: OAI收割
来源:物理研究所
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