中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Carrier dynamics in low-temperature-grown AlxGa1-xAs/GaAs multiple quantum wells

文献类型:期刊论文

作者Li, CY ; Wang, L ; Fu, PM ; Zhang, ZG ; Wei, YF ; Zhao, SP ; Yang, QS ; Han, YJ ; Guo, LW ; Huang, Q
刊名PHYSICAL REVIEW B
出版日期2003
卷号67期号:13
关键词GAAS HETEROSTRUCTURES BEATS LIFETIME SEMICONDUCTORS
ISSN号1098-0121
通讯作者Li, CY: Chinese Acad Sci, Inst Phys, Lab Opt Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要Femtosecond pump-probe spectroscopy has been used to study ultrafast relaxation dynamics in low-temperature-grown AlGaAs/GaAs multiple quantum wells (MQW's). It was found that the carrier lifetime of as-grown MQW's was much longer than those that had been subjected to 30 s rapid thermal annealing. The carrier lifetimes of samples annealed to three different temperatures (600, 700, and 800 degreesC) were measured and that annealed to 700 degreesC was found to be shorter than that of the other two. We also observed the quantum beats of heavy-hole and light-hole exciton in as-grown AlGaAs/GaAs MQW's at low temperature, but not in the annealed samples. The beat frequency was 3.7 THz, corresponding to the energy difference between heavy- and light-hole excitons in the as-grown AlGaAs/GaAs MQW's. As the temperature rose, the beats disappeared. We gave two possible reasons to explain this phenomenon. We tuned the central frequency of femtosecond Ti:sapphire laser through the resonant frequencies of heavy holes and light holes, while the phase of the quantum beats did not change.
收录类别SCI
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/34492]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Li, CY,Wang, L,Fu, PM,et al. Carrier dynamics in low-temperature-grown AlxGa1-xAs/GaAs multiple quantum wells[J]. PHYSICAL REVIEW B,2003,67(13).
APA Li, CY.,Wang, L.,Fu, PM.,Zhang, ZG.,Wei, YF.,...&Huang, Q.(2003).Carrier dynamics in low-temperature-grown AlxGa1-xAs/GaAs multiple quantum wells.PHYSICAL REVIEW B,67(13).
MLA Li, CY,et al."Carrier dynamics in low-temperature-grown AlxGa1-xAs/GaAs multiple quantum wells".PHYSICAL REVIEW B 67.13(2003).

入库方式: OAI收割

来源:物理研究所

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