Ce/GaN(0001) interfacial formation and electronic properties
文献类型：期刊论文
| 作者 | Xiao, WD ; Guo, QL ; Wang, EG |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2004 |
| 卷号 | 95期号:3页码:943 |
| 关键词 | METAL-SEMICONDUCTOR INTERFACE WURTZITE GAN SURFACES SCHOTTKY CONTACTS BARRIER HEIGHTS GROWTH FILMS GAN(0001)-(1X1) SI(111) STATES CE |
| ISSN号 | 0021-8979 |
| 通讯作者 | Wang, EG: Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and low-energy electron diffraction have been used to study the growth, interfacial reaction, and Fermi level movement of Ce on a n-type GaN(0001)-(1x1) surface. The results demonstrate that Ce grows in a layer-by-layer-like mode and reacts with the substrate at the interface, leading to formation of metallic Ga at room temperature. With increasing Ce coverage, a downward Fermi level movement is observed, and the resultant Schottky barrier height is 1.3 eV. Annealing promotes further diffusion and thus interfacial Ce-Ga exchange reaction. (C) 2004 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/34536]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xiao, WD,Guo, QL,Wang, EG. Ce/GaN(0001) interfacial formation and electronic properties[J]. JOURNAL OF APPLIED PHYSICS,2004,95(3):943. |
| APA | Xiao, WD,Guo, QL,&Wang, EG.(2004).Ce/GaN(0001) interfacial formation and electronic properties.JOURNAL OF APPLIED PHYSICS,95(3),943. |
| MLA | Xiao, WD,et al."Ce/GaN(0001) interfacial formation and electronic properties".JOURNAL OF APPLIED PHYSICS 95.3(2004):943. |
入库方式： OAI收割
来源：物理研究所
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