Ce-doping eiiects on electronic structures of Ba0.5Sr0.5TiO3 thin film
文献类型：期刊论文
| 作者 | Wang, SY ; Cheng, BL ; Wang, C ; Button, TW ; Dai, SY ; Jin, KJ ; Lu, HB ; Zhou, YL ; Chen, ZH ; Yang, GZ |
| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| 出版日期 | 2006 |
| 卷号 | 39期号:5页码:979 |
| 关键词 | FERROELECTRIC HETEROSTRUCTURES SRTIO3/SI(001) HETEROJUNCTIONS STRONTIUM-TITANATE LEAKAGE CURRENT SRTIO3 BATIO3 SURFACE |
| ISSN号 | 0022-3727 |
| 通讯作者 | Cheng, BL: Chinese Acad Sci, Bejing Normal Lab Condensed Matter Phys, Inst Phys, Beijing 100080, Peoples R China. |
| 中文摘要 | In order to clarify the basic reason why Ce doping call dramatically decrease the leakage current in Ba0.5Sr0.5TiO3 (BST) as reported in our previous work (Wang et at 2005 J. Phys. D: Appl. phys. 38 2253), we have employed x-ray photoelectron spectroscopy (XPS) and the optical transmittance technique to Study the electronic structure of undoped and 1.0 at% Ce-doped BST (CeBST) films fabricated by Pulsed laser deposition. XPS results show that Ce doping has a strong influence on the valence band and core levels of BST films, and that the Fermi level is lowered by about 0.35 eV by Ce doping. Optical transmittance measurements demonstrate that the energy,gap is expanded with Ce doping. These Ce-doping effects can induce an increase in the barrier height for the thermionic emission and eventually reduce leakage current in CeBST thin films. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/34540]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, SY,Cheng, BL,Wang, C,et al. Ce-doping eiiects on electronic structures of Ba0.5Sr0.5TiO3 thin film[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2006,39(5):979. |
| APA | Wang, SY.,Cheng, BL.,Wang, C.,Button, TW.,Dai, SY.,...&Yang, GZ.(2006).Ce-doping eiiects on electronic structures of Ba0.5Sr0.5TiO3 thin film.JOURNAL OF PHYSICS D-APPLIED PHYSICS,39(5),979. |
| MLA | Wang, SY,et al."Ce-doping eiiects on electronic structures of Ba0.5Sr0.5TiO3 thin film".JOURNAL OF PHYSICS D-APPLIED PHYSICS 39.5(2006):979. |
入库方式： OAI收割
来源：物理研究所
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