中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Changes in the layer roughness and crystallography during the annealing of CoFeB/MgO/CoFeB magnetic tunnel junctions

文献类型:期刊论文

作者Anderson, GIR ; Wei, HX ; Porter, NA ; Harnchana, V ; Brown, AP ; Brydson, RMD ; Arena, DA ; Dvorak, J ; Han, XF ; Marrows, CH
刊名JOURNAL OF APPLIED PHYSICS
出版日期2009
卷号105期号:6
关键词ROOM-TEMPERATURE MAGNETORESISTANCE SCATTERING COFEB
ISSN号0021-8979
通讯作者Anderson, GIR: Cambridge Display Technol, Madingley Rise,Madingley Rd, Cambridge CB3 0TX, England.
中文摘要Annealing is necessary to achieve giant tunneling magnetoresistance (TMR) values in sputtered CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs). In this study three complementary techniques were used to study the resulting changes in junction microstructure. The as-deposited TMR was modest, 5%, but rose to 101% after annealing at 325 degrees C for 1 h, corresponding to the tunneling spin polarization rising from 16% to 58%. Soft x-ray resonant magnetic scattering showed a roughening of the magnetic interfaces of the MTJ free layer, confirmed by transmission electron microscopy, which also showed the changes in the CoFeB and MgO to a lattice-matched polycrystalline form.
收录类别SCI
资助信息Chinese MOST [2006CB932200]; National Natural Science Foundation of China [10874225, 50721001]; UK EPSRC; Royal Society; Department of Energy, Office of Basic Energy Sciences
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/34554]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Anderson, GIR,Wei, HX,Porter, NA,et al. Changes in the layer roughness and crystallography during the annealing of CoFeB/MgO/CoFeB magnetic tunnel junctions[J]. JOURNAL OF APPLIED PHYSICS,2009,105(6).
APA Anderson, GIR.,Wei, HX.,Porter, NA.,Harnchana, V.,Brown, AP.,...&Marrows, CH.(2009).Changes in the layer roughness and crystallography during the annealing of CoFeB/MgO/CoFeB magnetic tunnel junctions.JOURNAL OF APPLIED PHYSICS,105(6).
MLA Anderson, GIR,et al."Changes in the layer roughness and crystallography during the annealing of CoFeB/MgO/CoFeB magnetic tunnel junctions".JOURNAL OF APPLIED PHYSICS 105.6(2009).

入库方式: OAI收割

来源:物理研究所

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