Characteristics of LaAlO3/Si(100) deposited under various oxygen pressures
文献类型：期刊论文
| 作者 | Xiang, WF ; Lu, HB ; Yan, L ; Guo, HZ ; Liu, LF ; Zhou, YL ; Yang, GZ ; Jiang, JC ; Cheng, HS ; Chen, ZH |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2003 |
| 卷号 | 93期号:1页码:533 |
| 关键词 | SRTIO3 THIN-FILMS MOLECULAR-BEAM EPITAXY ELECTRICAL-PROPERTIES GATE DIELECTRICS CEO2 LAYERS SI GROWTH TEMPERATURE SILICON LAALO3 |
| ISSN号 | 0021-8979 |
| 通讯作者 | Chen, ZH: Chinese Acad Sci, Inst Phys, Lab Opt Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | High-k dielectric LaAlO3 (LAO) thin films were deposited by laser molecular-beam epitaxy under various oxygen pressures. X-ray diffraction showed that the LAO films were amorphous. The chemical compositions and thickness of the LAO thin films were measured using Rutherford backscattering spectrometry. Al/LAO/Si metal-oxide-semiconductor capacitor structures were fabricated and measured. The leakage current density versus voltage curves showed that the leakage current of the LAO thin films decreased by increasing the oxygen pressure of the preparation. Specifically, when prepared under the active oxygen (containing atom oxygen), the leakage current of the LAO sample was lower than that prepared under the general oxygen. All of the capacitance-voltage curves have a positive shift along the voltage axis and the flatband voltage decreased with increasing oxygen pressures during the LAO thin-film preparation. (C) 2003 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/34585]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xiang, WF,Lu, HB,Yan, L,et al. Characteristics of LaAlO3/Si(100) deposited under various oxygen pressures[J]. JOURNAL OF APPLIED PHYSICS,2003,93(1):533. |
| APA | Xiang, WF.,Lu, HB.,Yan, L.,Guo, HZ.,Liu, LF.,...&Chen, ZH.(2003).Characteristics of LaAlO3/Si(100) deposited under various oxygen pressures.JOURNAL OF APPLIED PHYSICS,93(1),533. |
| MLA | Xiang, WF,et al."Characteristics of LaAlO3/Si(100) deposited under various oxygen pressures".JOURNAL OF APPLIED PHYSICS 93.1(2003):533. |
入库方式： OAI收割
来源：物理研究所
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