中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Characteristics of THz emission from GaAs crystal excited by 400 nm and 800 nm optical pulses

文献类型:期刊论文

作者Yang, YP ; Xu, XL ; Yan, W ; Wang, L
刊名CHINESE PHYSICS LETTERS
出版日期2005
卷号22期号:8页码:2123
关键词TEMPERATURE-GROWN GAAS SEMIINSULATING GAAS TERAHERTZ RADIATION GENERATION ANTENNAS
ISSN号0256-307X
通讯作者Wang, L: Chinese Acad Sci, Inst Phys, Lab Opt Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要THz emission spectroscopy is used to study the generation mechanism dependent behaviour of terahertz (THz) electromagnetic waves from the GaAs crystal under excitation by 400nm and 800nm femtosecond (fs) pulses, respectively. The wavelength dependence of the emission spectrum under two types of THz generation mechanisms is analysed. Under the optical rectification mechanism, a slight enhancement of the spectral amplitude in the high-frequency regime is observed in a GaAs(110) crystal by the excitation of a 400-nm optical pulse compared with that of 800nm. Whereas an obvious red shift of the amplitude spectrum occurs in the GaAs(100) sample under the transient photoconduction mechanism. These phenomena are explained in detail by the duration of the optical pump pulse and the band structure of GaAs, respectively.
收录类别SCI
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/34609]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Yang, YP,Xu, XL,Yan, W,et al. Characteristics of THz emission from GaAs crystal excited by 400 nm and 800 nm optical pulses[J]. CHINESE PHYSICS LETTERS,2005,22(8):2123.
APA Yang, YP,Xu, XL,Yan, W,&Wang, L.(2005).Characteristics of THz emission from GaAs crystal excited by 400 nm and 800 nm optical pulses.CHINESE PHYSICS LETTERS,22(8),2123.
MLA Yang, YP,et al."Characteristics of THz emission from GaAs crystal excited by 400 nm and 800 nm optical pulses".CHINESE PHYSICS LETTERS 22.8(2005):2123.

入库方式: OAI收割

来源:物理研究所

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