Characteristics of THz emission from GaAs crystal excited by 400 nm and 800 nm optical pulses
文献类型：期刊论文
| 作者 | Yang, YP ; Xu, XL ; Yan, W ; Wang, L |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2005 |
| 卷号 | 22期号:8页码:2123 |
| 关键词 | TEMPERATURE-GROWN GAAS SEMIINSULATING GAAS TERAHERTZ RADIATION GENERATION ANTENNAS |
| ISSN号 | 0256-307X |
| 通讯作者 | Wang, L: Chinese Acad Sci, Inst Phys, Lab Opt Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | THz emission spectroscopy is used to study the generation mechanism dependent behaviour of terahertz (THz) electromagnetic waves from the GaAs crystal under excitation by 400nm and 800nm femtosecond (fs) pulses, respectively. The wavelength dependence of the emission spectrum under two types of THz generation mechanisms is analysed. Under the optical rectification mechanism, a slight enhancement of the spectral amplitude in the high-frequency regime is observed in a GaAs(110) crystal by the excitation of a 400-nm optical pulse compared with that of 800nm. Whereas an obvious red shift of the amplitude spectrum occurs in the GaAs(100) sample under the transient photoconduction mechanism. These phenomena are explained in detail by the duration of the optical pump pulse and the band structure of GaAs, respectively. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/34609]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yang, YP,Xu, XL,Yan, W,et al. Characteristics of THz emission from GaAs crystal excited by 400 nm and 800 nm optical pulses[J]. CHINESE PHYSICS LETTERS,2005,22(8):2123. |
| APA | Yang, YP,Xu, XL,Yan, W,&Wang, L.(2005).Characteristics of THz emission from GaAs crystal excited by 400 nm and 800 nm optical pulses.CHINESE PHYSICS LETTERS,22(8),2123. |
| MLA | Yang, YP,et al."Characteristics of THz emission from GaAs crystal excited by 400 nm and 800 nm optical pulses".CHINESE PHYSICS LETTERS 22.8(2005):2123. |
入库方式： OAI收割
来源：物理研究所
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