Characterization of a-plane InN film grown on r-plane sapphire by MOCVD
文献类型：期刊论文
| 作者 | Zhu, XL ; Guo, LW ; Peng, MZ ; Ge, BH ; Zhang, J ; Ding, GJ ; Jia, HQ ; Chen, H ; Zhou, JM |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2008 |
| 卷号 | 310期号:16页码:3726 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION FUNDAMENTAL-BAND GAP CUBIC INN BUFFER MBE |
| ISSN号 | 0022-0248 |
| 通讯作者 | Guo, LW: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | A-plane InN film has been grown on r-plane sapphire substrate by MOCVD without any buffer. X-ray omega/2 theta scan confirms that only wurtzite-type InN was grown. The in-plane orientation relationship between a-plane InN and r-plane sapphire is < 0001 >(InN)//[(1) over bar 101](sapphire) and [(1) over bar 100](InN)//[11 (2) over bar0](Sapphire) deduced from selected area diffraction. Atomic force microscopy reveals that no stripe features appear on surface of the a-plane InN film, which is different from that of a-plane GaN grown on r-plane sapphire where stripes along [0 0 0 1] direction appear on the surface. The difference originates from the different growth mode of InN and GaN. In addition, photoluminescence and absorption spectra show that our a-plane InN has a narrow band gap of 0.7 eV, which is similar to that of c-plane InN film grown by the same system. (c) 2008 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation [10474126, 10574148]; Chinese High Technology program [2006AA03A107, 2006AA03A706]; Chinese Basic Research program [2002CB311900, 2006CB921300] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/34621]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhu, XL,Guo, LW,Peng, MZ,et al. Characterization of a-plane InN film grown on r-plane sapphire by MOCVD[J]. JOURNAL OF CRYSTAL GROWTH,2008,310(16):3726. |
| APA | Zhu, XL.,Guo, LW.,Peng, MZ.,Ge, BH.,Zhang, J.,...&Zhou, JM.(2008).Characterization of a-plane InN film grown on r-plane sapphire by MOCVD.JOURNAL OF CRYSTAL GROWTH,310(16),3726. |
| MLA | Zhu, XL,et al."Characterization of a-plane InN film grown on r-plane sapphire by MOCVD".JOURNAL OF CRYSTAL GROWTH 310.16(2008):3726. |
入库方式： OAI收割
来源：物理研究所
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