Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire
文献类型：期刊论文
| 作者 | Ding, GJ ; Guo, LW ; Xing, ZG ; Chen, Y ; Xu, PQ ; Jia, HQ ; Zhou, JM ; Chen, H |
| 刊名 | SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
 |
| 出版日期 | 2010 |
| 卷号 | 53期号:1页码:49 |
| 关键词 | FIELD-EFFECT TRANSISTORS ELECTRON-MOBILITY TRANSISTORS CHEMICAL-VAPOR-DEPOSITION OPTICAL-PROPERTIES INDUCED CHARGE POLARIZATION GAN EPITAXY |
| ISSN号 | 1674-7348 |
| 通讯作者 | Ding, GJ: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Al(x)Ga(1-x)N/GaN high-electron-mobility transistor (HEMT) structures with Al composition ranging from x = 0.13 to 0.36 are grown on sapphire substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The effects of Al content on crystal quality, surface morphology, optical and electrical characteristics of the AlGaN/GaN heterostructures have been analyzed. Although high Al-content (36%) heterostructure exhibits a distinguished photoluminescence peak related to recombination between the two-dimensional electron gas and photoexcited holes (2DEG-h), its crystal quality and rough surface morphology are poor. 2DEG mobility increases with the Al content up to 26% and then it apparently decreases for high Al-content (36%) AlGaN/GaN heterostructure. The increase of sheet carrier density with the increase of Al content has been observed. A high mobility at room temperature of 2105 cm(2)/V s with a sheet carrier density of n(s) = 1.10 x 10(13) cm(-2), for a 26% Al-content AlGaN/GaN heterostructure has been obtained, which is approaching state-of-the-art for HEMT grown on SiC. Sheet resistance as low as 274 Omega/square has also been achieved. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [10574148]; National High-Tech Research and Development Program of China [2006AA03A106, 2006AA03A107]; National Basic Research Program of China [2006CB921300] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/34632]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Ding, GJ,Guo, LW,Xing, ZG,et al. Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire[J]. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,2010,53(1):49. |
| APA | Ding, GJ.,Guo, LW.,Xing, ZG.,Chen, Y.,Xu, PQ.,...&Chen, H.(2010).Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire.SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,53(1),49. |
| MLA | Ding, GJ,et al."Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire".SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY 53.1(2010):49. |
入库方式： OAI收割
来源：物理研究所
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