中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Characterization of Zr-Si-N films deposited by cathodic vacuum arc with different N-2/SiH4 flow rates

文献类型:期刊论文

作者Zhang, GP ; Niu, EW ; Wang, XQ ; Lv, GH ; Zhou, L ; Pang, H ; Huang, J ; Chen, W ; Yang, SZ
刊名APPLIED SURFACE SCIENCE
出版日期2012
卷号258期号:8页码:3674
关键词MECHANICAL-PROPERTIES THIN-FILMS COATINGS NITRIDE SILICON MICROSTRUCTURE TIN VS.
ISSN号0169-4332
通讯作者Zhang, GP: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要Zr-Si-N films were deposited on silicon and steel substrates by cathodic vacuum arc with different N-2/SiH4 flow rates. The N-2/SiH4 flow rates were adjusted at the range from 0 to 12 sccm. The films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM), hardness and wear tests. The structure and the mechanical properties of Zr-Si-N films were compared to those of ZrN films. The results of XRD and XPS showed that Zr-Si-N films consisted of ZrN crystallites and SiNx amorphous phase. With increasing N-2/SiH4 flow rates, the orientation of Zr-Si-N films became to a mixture of (1 1 1) and (2 0 0). The column width became smaller, and then appeared to vanish with the increase in N-2/SiH4 flow rates. The hardness and Young's modulus of Zr-Si-N films increased with the N-2/SiH4 flow rates, reached a maximum value of 36 GPa and 320 GPa at 9 sccm, and then decreased 32 GPa and 305 GPa at 12 sccm, respectively. A low and stable of friction coefficient was obtained for the Zr-Si-N films. Friction coefficient was about 0.1. (C) 2011 Elsevier B. V. All rights reserved.
收录类别SCI
资助信息National Natural Science Foundation of China [10735090]
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/34671]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Zhang, GP,Niu, EW,Wang, XQ,et al. Characterization of Zr-Si-N films deposited by cathodic vacuum arc with different N-2/SiH4 flow rates[J]. APPLIED SURFACE SCIENCE,2012,258(8):3674.
APA Zhang, GP.,Niu, EW.,Wang, XQ.,Lv, GH.,Zhou, L.,...&Yang, SZ.(2012).Characterization of Zr-Si-N films deposited by cathodic vacuum arc with different N-2/SiH4 flow rates.APPLIED SURFACE SCIENCE,258(8),3674.
MLA Zhang, GP,et al."Characterization of Zr-Si-N films deposited by cathodic vacuum arc with different N-2/SiH4 flow rates".APPLIED SURFACE SCIENCE 258.8(2012):3674.

入库方式: OAI收割

来源:物理研究所

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