Characterization of Zr-Si-N films deposited by cathodic vacuum arc with different N-2/SiH4 flow rates
文献类型:期刊论文
作者 | Zhang, GP ; Niu, EW ; Wang, XQ ; Lv, GH ; Zhou, L ; Pang, H ; Huang, J ; Chen, W ; Yang, SZ |
刊名 | APPLIED SURFACE SCIENCE
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出版日期 | 2012 |
卷号 | 258期号:8页码:3674 |
关键词 | MECHANICAL-PROPERTIES THIN-FILMS COATINGS NITRIDE SILICON MICROSTRUCTURE TIN VS. |
ISSN号 | 0169-4332 |
通讯作者 | Zhang, GP: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
中文摘要 | Zr-Si-N films were deposited on silicon and steel substrates by cathodic vacuum arc with different N-2/SiH4 flow rates. The N-2/SiH4 flow rates were adjusted at the range from 0 to 12 sccm. The films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM), hardness and wear tests. The structure and the mechanical properties of Zr-Si-N films were compared to those of ZrN films. The results of XRD and XPS showed that Zr-Si-N films consisted of ZrN crystallites and SiNx amorphous phase. With increasing N-2/SiH4 flow rates, the orientation of Zr-Si-N films became to a mixture of (1 1 1) and (2 0 0). The column width became smaller, and then appeared to vanish with the increase in N-2/SiH4 flow rates. The hardness and Young's modulus of Zr-Si-N films increased with the N-2/SiH4 flow rates, reached a maximum value of 36 GPa and 320 GPa at 9 sccm, and then decreased 32 GPa and 305 GPa at 12 sccm, respectively. A low and stable of friction coefficient was obtained for the Zr-Si-N films. Friction coefficient was about 0.1. (C) 2011 Elsevier B. V. All rights reserved. |
收录类别 | SCI |
资助信息 | National Natural Science Foundation of China [10735090] |
语种 | 英语 |
公开日期 | 2013-09-17 |
源URL | [http://ir.iphy.ac.cn/handle/311004/34671] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Zhang, GP,Niu, EW,Wang, XQ,et al. Characterization of Zr-Si-N films deposited by cathodic vacuum arc with different N-2/SiH4 flow rates[J]. APPLIED SURFACE SCIENCE,2012,258(8):3674. |
APA | Zhang, GP.,Niu, EW.,Wang, XQ.,Lv, GH.,Zhou, L.,...&Yang, SZ.(2012).Characterization of Zr-Si-N films deposited by cathodic vacuum arc with different N-2/SiH4 flow rates.APPLIED SURFACE SCIENCE,258(8),3674. |
MLA | Zhang, GP,et al."Characterization of Zr-Si-N films deposited by cathodic vacuum arc with different N-2/SiH4 flow rates".APPLIED SURFACE SCIENCE 258.8(2012):3674. |
入库方式: OAI收割
来源:物理研究所
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