Charge modulated interfacial conductivity in SrTiO3-based oxide heterostructures
文献类型：期刊论文
| 作者 | Chen, YZ ; Stamate, E ; Pryds, N ; Sun, JR ; Shen, BG ; Linderoth, S |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2011 |
| 卷号 | 98期号:23 |
| 关键词 | PULSED-LASER DEPOSITION ELECTRONIC-STRUCTURE DEFECT CHEMISTRY TEMPERATURE GROWTH FILMS GAS |
| ISSN号 | 0003-6951 |
| 通讯作者 | Chen, YZ: Tech Univ Denmark, Fuel Cells & Solid State Chem Div, Riso Natl Lab Sustainable Energy, DK-4000 Roskilde, Denmark. |
| 中文摘要 | When depositing amorphous SrTiO3 (STO) films on crystalline STO substrates by pulsed laser deposition, metallic interfaces are observed, though both materials are band-gap insulators. The interfacial conductivity exhibits strong dependence on oxygen pressure during film growth, which is closely related to the STO plasma expansion in the background gas of oxygen. By controlling the charge balance in the STO plasma with an external bias, V-bias, of -10 V <= V-bias <= 5 V at an oxygen pressure of 10(-4) Pa, the interfacial conduction can be tuned to be metallic or semiconducting. These results provide a new opportunity to tailor low-dimensional interface states of complex oxide heterostructures. (c) 2011 American Institute of Physics. [doi:10.1063/1.3598391] |
| 收录类别 | SCI |
| 资助信息 | National Fundamental Research of China [2007CB925002]; National Natural Science Foundation of China [50832007, 50721001] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/34683]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, YZ,Stamate, E,Pryds, N,et al. Charge modulated interfacial conductivity in SrTiO3-based oxide heterostructures[J]. APPLIED PHYSICS LETTERS,2011,98(23). |
| APA | Chen, YZ,Stamate, E,Pryds, N,Sun, JR,Shen, BG,&Linderoth, S.(2011).Charge modulated interfacial conductivity in SrTiO3-based oxide heterostructures.APPLIED PHYSICS LETTERS,98(23). |
| MLA | Chen, YZ,et al."Charge modulated interfacial conductivity in SrTiO3-based oxide heterostructures".APPLIED PHYSICS LETTERS 98.23(2011). |
入库方式： OAI收割
来源：物理研究所
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