Chiral topological excitonic insulator in semiconductor quantum wells
文献类型：期刊论文
| 作者 | Hao, NN ; Zhang, P ; Li, JA ; Wang, ZG ; Zhang, W ; Wang, YP |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2010 |
| 卷号 | 82期号:19 |
| 关键词 | QUANTIZED HALL CONDUCTANCE EDGE STATES 2-DIMENSIONAL ELECTRON PARITY |
| ISSN号 | 1098-0121 |
| 通讯作者 | Zhang, P: Inst Appl Phys & Computat Math, LCP, POB 8009, Beijing 100088, Peoples R China. |
| 中文摘要 | We present a scheme to realize the chiral topological excitonic insulator in semiconductor heterostructures which can be experimentally fabricated with a coupled quantum well adjacent to two ferromagnetic insulating films. The different mean-field chiral topological orders, which are due to the change in the directions of the magnetization of the ferromagnetic films, can be characterized by the Thouless, Kohmoto, Nightingale, and Nijs numbers in the bulk system as well as by the winding numbers of the gapless states in the edged system. Furthermore, we propose an experimental scheme to detect the emergence of the chiral gapless edge state and distinguish different chiral topological orders by measuring the thermal conductance. |
| 收录类别 | SCI |
| 资助信息 | NSFC [90921003, 10574150, 60776063]; National Basic Research Program of China [2009CB929103]; China Academy of Engineering and Physics |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/34734]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Hao, NN,Zhang, P,Li, JA,et al. Chiral topological excitonic insulator in semiconductor quantum wells[J]. PHYSICAL REVIEW B,2010,82(19). |
| APA | Hao, NN,Zhang, P,Li, JA,Wang, ZG,Zhang, W,&Wang, YP.(2010).Chiral topological excitonic insulator in semiconductor quantum wells.PHYSICAL REVIEW B,82(19). |
| MLA | Hao, NN,et al."Chiral topological excitonic insulator in semiconductor quantum wells".PHYSICAL REVIEW B 82.19(2010). |
入库方式： OAI收割
来源：物理研究所
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