Comparative study of e-beam resist processes at different development temperature
文献类型：期刊论文
| 作者 | Yang, HF ; Jin, AZ ; Luo, Q ; Gu, CZ ; Cui, Z |
| 刊名 | MICROELECTRONIC ENGINEERING
 |
| 出版日期 | 2007 |
| 卷号 | 84期号:5-8页码:1109 |
| ISSN号 | 0167-9317 |
| 中文摘要 | The effect of development temperatures on the performance of three mostly used e-beam resists, ZEP-520, HSQ and SAL-601 have been investigated. For the positive resist ZEP-520, the contrast increases significantly, but the sensitivity decreases, with the decreasing of the development temperature. On the other hand, the negative resist HSQ whose sensitivity decreases dramatically, but the contrast increases, with the increase of developer temperature. Unlike the negative resist HSQ, the sensitivity of the negative chemically amplified resist SAL-601 enhances with the increase of the developer temperature and the contrast decreases. Using high contrast process, we have achieved high dense patterns with e-beam lithography at low electron energy. (c) 2007 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/34940]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yang, HF,Jin, AZ,Luo, Q,et al. Comparative study of e-beam resist processes at different development temperature[J]. MICROELECTRONIC ENGINEERING,2007,84(5-8):1109. |
| APA | Yang, HF,Jin, AZ,Luo, Q,Gu, CZ,&Cui, Z.(2007).Comparative study of e-beam resist processes at different development temperature.MICROELECTRONIC ENGINEERING,84(5-8),1109. |
| MLA | Yang, HF,et al."Comparative study of e-beam resist processes at different development temperature".MICROELECTRONIC ENGINEERING 84.5-8(2007):1109. |
入库方式： OAI收割
来源：物理研究所
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