Comparative study of n-MgZnO/p-Si ultraviolet-B photodetector performance with different device structures
文献类型：期刊论文
| 作者 | Hou, YN ; Mei, ZX ; Liang, HL ; Ye, DQ ; Liang, S ; Gu, CZ ; Du, XL |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2011 |
| 卷号 | 98期号:26 |
| 关键词 | BEAM EPITAXIAL-GROWTH UV-DETECTOR ZNO FILMS FABRICATION MGXZN1-XO SAPPHIRE ARRAYS BLIND |
| ISSN号 | 0003-6951 |
| 通讯作者 | Mei, ZX: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | We fabricated (Ga,Mn)As/AlOx/Co40Fe40B20 magnetic tunnel junctions with ferromagnetic semiconductor/insulator/ferromagnetic metal (S/I/F) structure. The treatments of pre-annealing and post-plasma cleaning on the (Ga,Mn) As film were introduced before the growth of the subsequent layers. A high tunneling magnetoresistance (TMR) ratio of 101% is achieved at 2 K, and the spin polarization of (Ga,Mn) As, P = 56.8%, is deduced from Julliere's formula. The improved TMR ratio is primarily due to the improved magnetism of (Ga,Mn) As layer by low-temperature annealing and cleaned interface between (Ga,Mn) As and AlOx attained by subsequent plasma cleaning process. (C) 2011 American Institute of Physics. [doi:10.1063/1.3603946] |
| 收录类别 | SCI |
| 资助信息 | National Science Foundation [61076007, 50532090, 60606023, 50825206]; Ministry of Science and Technology of China [2007CB936203, 2009CB929400, 2009AA033101, 2011CB302002]; Chinese Academy of Sciences |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/34942]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Hou, YN,Mei, ZX,Liang, HL,et al. Comparative study of n-MgZnO/p-Si ultraviolet-B photodetector performance with different device structures[J]. APPLIED PHYSICS LETTERS,2011,98(26). |
| APA | Hou, YN.,Mei, ZX.,Liang, HL.,Ye, DQ.,Liang, S.,...&Du, XL.(2011).Comparative study of n-MgZnO/p-Si ultraviolet-B photodetector performance with different device structures.APPLIED PHYSICS LETTERS,98(26). |
| MLA | Hou, YN,et al."Comparative study of n-MgZnO/p-Si ultraviolet-B photodetector performance with different device structures".APPLIED PHYSICS LETTERS 98.26(2011). |
入库方式： OAI收割
来源：物理研究所
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