Comparative Study on InAs/InGaAs Dots-in-a-Well Structure Grown on GaAs(311) B and (100) Substrates
文献类型：期刊论文
| 作者 | Wang, L ; Li, MC ; Xiong, M ; Wang, WX ; Gao, HC ; Zhao, LC |
| 刊名 | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
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| 出版日期 | 2010 |
| 卷号 | 10期号:11页码:7359 |
| 关键词 | ASSEMBLED QUANTUM DOTS 1.3 MU-M LASERS (311)B |
| ISSN号 | 1533-4880 |
| 通讯作者 | Li, MC: Harbin Inst Technol, Dept Mat Sci & Engn, Harbin 150001, Peoples R China. |
| 中文摘要 | The InAs/InGaAs dots-in-a-well (DWELL) structures were grown on both GaAs(311) B and (100) substrates by molecular beam epitaxy. Quantum dots (QDs) grown on GaAs(311) B substrate are of higher density and more uniform size distribution, yet QDs grown on GaAs(100) substrate demonstrate a bimodal size distribution. The growth mechanism of these surface morphologies was briefly discussed. We found that the photoluminescence (PL) linewidth of DWELL grown on GaAs(311) B substrate was much narrower than the linewidth of DWELL grown on GaAs(100), which suggests a promising advantage in many QD based devices. We also found the temperature had a stronger impact on the PL intensity of DWELL grown on GaAs(311) B, which was explained by the lower thermal active energy and higher density of interfacial point defects of DWELL grown on GaAs(311) B. These results provide people a rather comprehensive insight into the advantages and disadvantages of DWELL grown on GaAs(311) B substrates. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/34946]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, L,Li, MC,Xiong, M,et al. Comparative Study on InAs/InGaAs Dots-in-a-Well Structure Grown on GaAs(311) B and (100) Substrates[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2010,10(11):7359. |
| APA | Wang, L,Li, MC,Xiong, M,Wang, WX,Gao, HC,&Zhao, LC.(2010).Comparative Study on InAs/InGaAs Dots-in-a-Well Structure Grown on GaAs(311) B and (100) Substrates.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,10(11),7359. |
| MLA | Wang, L,et al."Comparative Study on InAs/InGaAs Dots-in-a-Well Structure Grown on GaAs(311) B and (100) Substrates".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 10.11(2010):7359. |
入库方式： OAI收割
来源：物理研究所
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