Competitive Growth and Etching of Epitaxial Graphene
文献类型：期刊论文
| 作者 | Zhang, LC ; Ni, M ; Liu, DH ; Shi, DX ; Zhang, GY |
| 刊名 | JOURNAL OF PHYSICAL CHEMISTRY C
 |
| 出版日期 | 2012 |
| 卷号 | 116期号:51页码:26929 |
| 关键词 | LIQUID-PHASE EXFOLIATION LARGE-AREA FILMS GRAPHITE OXIDE TRANSPARENT |
| ISSN号 | 1932-7447 |
| 通讯作者 | Zhang, LC: Kunming Univ, Dept Phys, Kunming 650214, Peoples R China. |
| 中文摘要 | In this paper, we studied the competition of growth and etching during graphene epitaxial growth in the remote plasma enhanced chemical vapor deposition (r-PECVD) system. Epitaxial growth of graphene on HOPG substrates with a simultaneous etching process was systematically explored at various temperatures. It was found that etching of graphene by hydrogen radicals generated in the r-PECVD system was a critical factor during graphene's growth for controlling the nucleation densities, lateral growth rates, and layer thickness. At temperatures lower than 490 degrees C, the etching effect is dominant, and there is no graphene nucleation. And at temperatures higher than 490 degrees C, the etching effect decreases gradually with rising temperature and the growth effect stands out. The optimized epitaxial growth was at 520 degrees C, and at that temperature a monolayer graphene single crystal was achieved with near perfect lattice structure on HOPG substrates. |
| 收录类别 | SCI |
| 资助信息 | Talents Introduction Project of Kunming University [YJL12009] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/34981]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, LC,Ni, M,Liu, DH,et al. Competitive Growth and Etching of Epitaxial Graphene[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2012,116(51):26929. |
| APA | Zhang, LC,Ni, M,Liu, DH,Shi, DX,&Zhang, GY.(2012).Competitive Growth and Etching of Epitaxial Graphene.JOURNAL OF PHYSICAL CHEMISTRY C,116(51),26929. |
| MLA | Zhang, LC,et al."Competitive Growth and Etching of Epitaxial Graphene".JOURNAL OF PHYSICAL CHEMISTRY C 116.51(2012):26929. |
入库方式： OAI收割
来源：物理研究所
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