Computational analysis of the vertical Bridgman growth of Te doped GaSb under microgravity
文献类型：期刊论文
| 作者 | Liu, YC ; Chen, WC ; Ge, PW ; Huo, CR |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2000 |
| 卷号 | 17期号:10页码:775 |
| 关键词 | NATURAL-CONVECTION CRYSTAL-GROWTH OXIDES MELT |
| ISSN号 | 0256-307X |
| 通讯作者 | Liu, YC: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | A transient analysis of Te doped GaSb melt growth process is performed using finite element method. The solute concentration at the growth interface increases with time because of k < 1. The growth interface shape becomes it little hat at the beginning of the growth compared with the initial shape. Radial segregation occurs even under the |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/35018]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, YC,Chen, WC,Ge, PW,et al. Computational analysis of the vertical Bridgman growth of Te doped GaSb under microgravity[J]. CHINESE PHYSICS LETTERS,2000,17(10):775. |
| APA | Liu, YC,Chen, WC,Ge, PW,&Huo, CR.(2000).Computational analysis of the vertical Bridgman growth of Te doped GaSb under microgravity.CHINESE PHYSICS LETTERS,17(10),775. |
| MLA | Liu, YC,et al."Computational analysis of the vertical Bridgman growth of Te doped GaSb under microgravity".CHINESE PHYSICS LETTERS 17.10(2000):775. |
入库方式： OAI收割
来源：物理研究所
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