中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Contrasting growth modes of Mn on Ge(100) and Ge(111) surfaces: Subsurface segregation versus intermixing

文献类型:期刊论文

作者Zhu, WG ; Weitering, HH ; Wang, EG ; Kaxiras, E ; Zhang, ZY
刊名PHYSICAL REVIEW LETTERS
出版日期2004
卷号93期号:12
关键词MAGNETIC SEMICONDUCTORS SI(111) ENERGY PSEUDOPOTENTIALS FERROMAGNETISM (GA POINTS BORON GE MN)AS
ISSN号0031-9007
通讯作者Zhu, WG: Oak Ridge Natl Lab, Condensed Matter Sci Div, Oak Ridge, TN 37831 USA.
中文摘要Based on first-principles total energy calculations within density functional theory, we show that a low dose of Mn on Ge(100) initiates in a novel subsurface growth mode, characterized by easy access to, and strong preference for, interstitial sites located between the two topmost Ge layers. Strikingly, such a "subsurfactant action" is preserved even during epitaxial growth of additional Ge layers, analogous to the well-known phenomenon of surfactant action. In contrast, along the [111] orientation, Mn can easily diffuse into the bulk via interstitial sites. These results are discussed within the context of dopant control in dilute magnetic semiconductors.
收录类别SCI
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/35080]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Zhu, WG,Weitering, HH,Wang, EG,et al. Contrasting growth modes of Mn on Ge(100) and Ge(111) surfaces: Subsurface segregation versus intermixing[J]. PHYSICAL REVIEW LETTERS,2004,93(12).
APA Zhu, WG,Weitering, HH,Wang, EG,Kaxiras, E,&Zhang, ZY.(2004).Contrasting growth modes of Mn on Ge(100) and Ge(111) surfaces: Subsurface segregation versus intermixing.PHYSICAL REVIEW LETTERS,93(12).
MLA Zhu, WG,et al."Contrasting growth modes of Mn on Ge(100) and Ge(111) surfaces: Subsurface segregation versus intermixing".PHYSICAL REVIEW LETTERS 93.12(2004).

入库方式: OAI收割

来源:物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。