Contrasting growth modes of Mn on Ge(100) and Ge(111) surfaces: Subsurface segregation versus intermixing
文献类型：期刊论文
| 作者 | Zhu, WG ; Weitering, HH ; Wang, EG ; Kaxiras, E ; Zhang, ZY |
| 刊名 | PHYSICAL REVIEW LETTERS
 |
| 出版日期 | 2004 |
| 卷号 | 93期号:12 |
| 关键词 | MAGNETIC SEMICONDUCTORS SI(111) ENERGY PSEUDOPOTENTIALS FERROMAGNETISM (GA POINTS BORON GE MN)AS |
| ISSN号 | 0031-9007 |
| 通讯作者 | Zhu, WG: Oak Ridge Natl Lab, Condensed Matter Sci Div, Oak Ridge, TN 37831 USA. |
| 中文摘要 | Based on first-principles total energy calculations within density functional theory, we show that a low dose of Mn on Ge(100) initiates in a novel subsurface growth mode, characterized by easy access to, and strong preference for, interstitial sites located between the two topmost Ge layers. Strikingly, such a "subsurfactant action" is preserved even during epitaxial growth of additional Ge layers, analogous to the well-known phenomenon of surfactant action. In contrast, along the [111] orientation, Mn can easily diffuse into the bulk via interstitial sites. These results are discussed within the context of dopant control in dilute magnetic semiconductors. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/35080]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhu, WG,Weitering, HH,Wang, EG,et al. Contrasting growth modes of Mn on Ge(100) and Ge(111) surfaces: Subsurface segregation versus intermixing[J]. PHYSICAL REVIEW LETTERS,2004,93(12). |
| APA | Zhu, WG,Weitering, HH,Wang, EG,Kaxiras, E,&Zhang, ZY.(2004).Contrasting growth modes of Mn on Ge(100) and Ge(111) surfaces: Subsurface segregation versus intermixing.PHYSICAL REVIEW LETTERS,93(12). |
| MLA | Zhu, WG,et al."Contrasting growth modes of Mn on Ge(100) and Ge(111) surfaces: Subsurface segregation versus intermixing".PHYSICAL REVIEW LETTERS 93.12(2004). |
入库方式： OAI收割
来源：物理研究所
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