Control of the charge-ordering-insulating phase in epitaxial La1-xCaxMnO3 (x=0.30-0.45) thin films under the anisotropic strain
文献类型：期刊论文
| 作者 | Huang, Z ; Gao, GY ; Yin, ZZ ; Feng, XX ; Chen, YZ ; Zhao, XR ; Sun, JR ; Wu, WB |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2009 |
| 卷号 | 105期号:11 |
| 关键词 | DOPED MANGANITES LA0.5CA0.5MNO3 MAGNETORESISTANCE COEXISTENCE TRANSITION SEPARATION IMAGES |
| ISSN号 | 0021-8979 |
| 通讯作者 | Huang, Z: Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China. |
| 中文摘要 | The control of charge-ordering-insulating (COI) phase in epitaxial La1-xCaxMnO3/NdGaO3(001) (x=0.30-0.45) thin films with essentially the ferromagnetic metal ground state as observed for the bulk counterparts has been realized via the anisotropic strain relaxation. This epitaxial system is special in that there is a negligible average lattice mismatch but a large anisotropic strain in between the film and the substrate. By changing the film thickness, postannealing temperature, along with the doping level for strain relaxation, the COI phase in the films can be tuned to either melt completely under 1 T, producing a huge low-field magnetoresistance (MR) in a wide temperature range (e.g., for the 20 nm film with x=0.33 and annealed at 780 degrees C, the MR can be over 70% at 0.2 T and 97% at 0.5 T in 10-200 K), or survive under a high magnetic field of 6 T. The results demonstrate the crucial role of anisotropic strain relaxation in inducing the inhomogeneity in manganites films, thus providing a forward understanding of the strain field in manganite physics. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3141751] |
| 收录类别 | SCI |
| 资助信息 | National Science Foundation of China [10874166, 50325206, 50721061, 50872112]; National Basic Research Program of China [2006CB922005, 2009CB929502] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/35096]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Huang, Z,Gao, GY,Yin, ZZ,et al. Control of the charge-ordering-insulating phase in epitaxial La1-xCaxMnO3 (x=0.30-0.45) thin films under the anisotropic strain[J]. JOURNAL OF APPLIED PHYSICS,2009,105(11). |
| APA | Huang, Z.,Gao, GY.,Yin, ZZ.,Feng, XX.,Chen, YZ.,...&Wu, WB.(2009).Control of the charge-ordering-insulating phase in epitaxial La1-xCaxMnO3 (x=0.30-0.45) thin films under the anisotropic strain.JOURNAL OF APPLIED PHYSICS,105(11). |
| MLA | Huang, Z,et al."Control of the charge-ordering-insulating phase in epitaxial La1-xCaxMnO3 (x=0.30-0.45) thin films under the anisotropic strain".JOURNAL OF APPLIED PHYSICS 105.11(2009). |
入库方式： OAI收割
来源：物理研究所
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