Control of the epitaxial orientation and reduction of the interface leakage current in YMnO3/GaN heterostructures
文献类型：期刊论文
| 作者 | Wu, H ; Yuan, J ; Peng, T ; Pan, Y ; Han, T ; Shen, K ; Zhao, BR ; Liu, C |
| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| 出版日期 | 2009 |
| 卷号 | 42期号:18 |
| 关键词 | NONVOLATILE MEMORY DEVICES THIN-FILMS PLATINUM-ELECTRODES GROWTH DEPOSITION SI CANDIDATE OXIDES FIELD |
| ISSN号 | 0022-3727 |
| 通讯作者 | Liu, C: Wuhan Univ, Key Lab Acoust & Photon Mat & Devices, Minist Educ, Wuhan 430072, Peoples R China. |
| 中文摘要 | Epitaxial ferroelectric YMnO3 (YMO) thin films with high crystalline quality were fabricated on (0001) GaN substrates by pulsed laser deposition followed by rapid thermal annealing. X-ray diffraction and transmission electron microscopy measurements reveal that YMO layers are of (0001) orientation with an in-plane epitaxial relation (0001)(YMO) parallel to (0001)(GaN), [11 (2) over tilde0](YMO) parallel to [11 (2) over tilde0](GaN). The orientation of the lattice of YMO was found to be controlled by the annealing conditions. Y2O3 nanocrystallites observed near the interface were possible seeds to stabilize the orientation of the epitaxial YMO thin films. The appropriate annealing treatment could improve the crystalline quality and reduce the interface leakage current. |
| 收录类别 | SCI |
| 资助信息 | China Postdoctoral Science Foundation [20070420929]; national 973 programme [200708935304]; NSFC [10775110]; specialized Research Fund for the Doctoral Programme of Higher Education [20060486047] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/35097]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wu, H,Yuan, J,Peng, T,et al. Control of the epitaxial orientation and reduction of the interface leakage current in YMnO3/GaN heterostructures[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2009,42(18). |
| APA | Wu, H.,Yuan, J.,Peng, T.,Pan, Y.,Han, T.,...&Liu, C.(2009).Control of the epitaxial orientation and reduction of the interface leakage current in YMnO3/GaN heterostructures.JOURNAL OF PHYSICS D-APPLIED PHYSICS,42(18). |
| MLA | Wu, H,et al."Control of the epitaxial orientation and reduction of the interface leakage current in YMnO3/GaN heterostructures".JOURNAL OF PHYSICS D-APPLIED PHYSICS 42.18(2009). |
入库方式： OAI收割
来源：物理研究所
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