Control performance of a single-chip white light emitting diode by adjusting strain in InGaN underlying layer
文献类型：期刊论文
| 作者 | Wang, XH ; Guo, LW ; Jia, HQ ; Xing, ZG ; Wang, Y ; Pei, XJ ; Zhou, JM ; Chen, H |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2009 |
| 卷号 | 94期号:11 |
| 关键词 | LASER |
| ISSN号 | 0003-6951 |
| 通讯作者 | Guo, LW: Chinese Acad Sci, Beijing Natl Lab Condensed Matter, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Light emission from green to white in a single-chip light emitting diode is modulated by adjusting the strain in InGaN underlying layer (UL) embedded below an active layer of InGaN/GaN multiple quantum wells. Transmission electron microscopy combined with x-ray reciprocal space mapping reveals that indium phase separation in InGaN quantum well active layer is enhanced by using a partly relaxed InGaN UL and In-rich quantum dots with different size and indium composition are formed. They emit multicolor lights whose mixing produces white light. Quality of the white light could be controlled by modulation on relaxation degree of the InGaN UL. |
| 收录类别 | SCI |
| 资助信息 | Key Innovation Program of Chinese Academy of Science; National Natural Science Foundation [10574148]; Chinese Basic Research Program 863 [2006AA03A 106, 2006AA03A 107]; Chinese Science and Technology Ministry |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/35101]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, XH,Guo, LW,Jia, HQ,et al. Control performance of a single-chip white light emitting diode by adjusting strain in InGaN underlying layer[J]. APPLIED PHYSICS LETTERS,2009,94(11). |
| APA | Wang, XH.,Guo, LW.,Jia, HQ.,Xing, ZG.,Wang, Y.,...&Chen, H.(2009).Control performance of a single-chip white light emitting diode by adjusting strain in InGaN underlying layer.APPLIED PHYSICS LETTERS,94(11). |
| MLA | Wang, XH,et al."Control performance of a single-chip white light emitting diode by adjusting strain in InGaN underlying layer".APPLIED PHYSICS LETTERS 94.11(2009). |
入库方式： OAI收割
来源：物理研究所
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