Controlled growth of O-polar ZnO epitaxial film by oxygen radical preconditioning of sapphire substrate
文献类型：期刊论文
| 作者 | Mei, ZX ; Wang, Y ; Du, XL ; Ying, MJ ; Zeng, ZQ ; Zheng, H ; Jia, JF ; Xue, QK ; Zhang, Z |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2004 |
| 卷号 | 96期号:12页码:7108 |
| 关键词 | THIN-FILMS ELECTRONIC-STRUCTURE SURFACE NITRIDATION GAN LAYERS |
| ISSN号 | 0021-8979 |
| 通讯作者 | Du, XL: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Electron Microscopy Condensed Ma, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Oxygen radicals pregrowth treatment and surface nitridation were used to eliminate Zn-polar inversion domains and control the growth of single-domain O-polar ZnO film on sapphire (0001) substrate by rf plasma-assisted molecular beam epitaxy. We found that the formation of oxygen-terminated sapphire surface prior to nitridation is crucial for achieving the anion polarity in subsequent AlN and ZnO layers, as demonstrated by formation of the 3x3 surface reconstruction during ZnO growth and ex situ polarity determination. This method, in general, can be applied to growth of other polar films, such as II-VI oxides and III-V nitrides, on sapphire (0001) substrates. (C) 2004 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/35132]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Mei, ZX,Wang, Y,Du, XL,et al. Controlled growth of O-polar ZnO epitaxial film by oxygen radical preconditioning of sapphire substrate[J]. JOURNAL OF APPLIED PHYSICS,2004,96(12):7108. |
| APA | Mei, ZX.,Wang, Y.,Du, XL.,Ying, MJ.,Zeng, ZQ.,...&Zhang, Z.(2004).Controlled growth of O-polar ZnO epitaxial film by oxygen radical preconditioning of sapphire substrate.JOURNAL OF APPLIED PHYSICS,96(12),7108. |
| MLA | Mei, ZX,et al."Controlled growth of O-polar ZnO epitaxial film by oxygen radical preconditioning of sapphire substrate".JOURNAL OF APPLIED PHYSICS 96.12(2004):7108. |
入库方式： OAI收割
来源：物理研究所
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