中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Controlled growth of Zn-polar ZnO film on MgAl2O4 (111) substrate using MgO buffer layer

文献类型:期刊论文

作者Zeng, ZQ ; Liu, YZ ; Yuan, HT ; Mei, ZX ; Du, XL ; Jia, JF ; Xue, QK ; Zhang, Z ; Salamo, GJ
刊名JOURNAL OF PHYSICS D-APPLIED PHYSICS
出版日期2010
卷号43期号:8
关键词MOLECULAR-BEAM EPITAXY EPILAYERS SAPPHIRE
ISSN号0022-3727
通讯作者Du, XL: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要A pure rocksalt MgO buffer layer was used to modify the surface structure of MgAl2O4 (1 1 1) substrates to achieve growth of a Zn-polar ZnO film by radio frequency plasma-assisted molecular beam epitaxy. It is found that this pure rocksalt MgO buffer layer plays a crucial role in 30 degrees rotation domain elimination, surface morphology improvement and Zn-polarity control of the ZnO film, as demonstrated by in situ reflection high-energy electron diffraction and ex situ transmission electron microscopy. Atomic force microscopy observation also illustrates a smooth surface for the ZnO film.
收录类别SCI
资助信息National Science Foundation of China [50532090]; Ministry of Science and Technology of China [2007CB936203, 2009CB929400]; Chinese Academy of Sciences
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/35135]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Zeng, ZQ,Liu, YZ,Yuan, HT,et al. Controlled growth of Zn-polar ZnO film on MgAl2O4 (111) substrate using MgO buffer layer[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2010,43(8).
APA Zeng, ZQ.,Liu, YZ.,Yuan, HT.,Mei, ZX.,Du, XL.,...&Salamo, GJ.(2010).Controlled growth of Zn-polar ZnO film on MgAl2O4 (111) substrate using MgO buffer layer.JOURNAL OF PHYSICS D-APPLIED PHYSICS,43(8).
MLA Zeng, ZQ,et al."Controlled growth of Zn-polar ZnO film on MgAl2O4 (111) substrate using MgO buffer layer".JOURNAL OF PHYSICS D-APPLIED PHYSICS 43.8(2010).

入库方式: OAI收割

来源:物理研究所

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