中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
CONVERGENT-BEAM ELECTRON-DIFFRACTION STUDY OF GE0.5SI0.5/SI STRAINED-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY

文献类型:期刊论文

作者DUAN, XF ; FUNG, KK ; CHU, YM ; SHENG, C ; ZHOU, GL
刊名PHILOSOPHICAL MAGAZINE LETTERS
出版日期1991
卷号63期号:2页码:79
关键词MULTILAYERS HETEROSTRUCTURES
ISSN号0950-0839
通讯作者DUAN, XF: CHINESE ACAD SCI,BEIJING LAB ELECTR MICROSCOPY,POB 2724,BEIJING 100080,PEOPLES R CHINA.
中文摘要Side bands due to purely composition and combined composition-strain modulation in plan-view specimens of a nominally Ge0.5Si0.5(5nm)/Si(25nm) superlattice have been obtained by large-angle convergent-beam electron diffraction. The intensities of the side bands have been calculated from a periodic tension-compression model of the superlattice bilayer using the kinematical theory of electron diffraction. Accurate values of elastic strains in the bilayer and of the Ge content can be obtained in this way.
收录类别SCI
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/35168]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
DUAN, XF,FUNG, KK,CHU, YM,et al. CONVERGENT-BEAM ELECTRON-DIFFRACTION STUDY OF GE0.5SI0.5/SI STRAINED-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY[J]. PHILOSOPHICAL MAGAZINE LETTERS,1991,63(2):79.
APA DUAN, XF,FUNG, KK,CHU, YM,SHENG, C,&ZHOU, GL.(1991).CONVERGENT-BEAM ELECTRON-DIFFRACTION STUDY OF GE0.5SI0.5/SI STRAINED-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY.PHILOSOPHICAL MAGAZINE LETTERS,63(2),79.
MLA DUAN, XF,et al."CONVERGENT-BEAM ELECTRON-DIFFRACTION STUDY OF GE0.5SI0.5/SI STRAINED-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY".PHILOSOPHICAL MAGAZINE LETTERS 63.2(1991):79.

入库方式: OAI收割

来源:物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。