CONVERGENT-BEAM ELECTRON-DIFFRACTION STUDY OF GE0.5SI0.5/SI STRAINED-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY
文献类型:期刊论文
作者 | DUAN, XF ; FUNG, KK ; CHU, YM ; SHENG, C ; ZHOU, GL |
刊名 | PHILOSOPHICAL MAGAZINE LETTERS
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出版日期 | 1991 |
卷号 | 63期号:2页码:79 |
关键词 | MULTILAYERS HETEROSTRUCTURES |
ISSN号 | 0950-0839 |
通讯作者 | DUAN, XF: CHINESE ACAD SCI,BEIJING LAB ELECTR MICROSCOPY,POB 2724,BEIJING 100080,PEOPLES R CHINA. |
中文摘要 | Side bands due to purely composition and combined composition-strain modulation in plan-view specimens of a nominally Ge0.5Si0.5(5nm)/Si(25nm) superlattice have been obtained by large-angle convergent-beam electron diffraction. The intensities of the side bands have been calculated from a periodic tension-compression model of the superlattice bilayer using the kinematical theory of electron diffraction. Accurate values of elastic strains in the bilayer and of the Ge content can be obtained in this way. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-17 |
源URL | [http://ir.iphy.ac.cn/handle/311004/35168] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | DUAN, XF,FUNG, KK,CHU, YM,et al. CONVERGENT-BEAM ELECTRON-DIFFRACTION STUDY OF GE0.5SI0.5/SI STRAINED-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY[J]. PHILOSOPHICAL MAGAZINE LETTERS,1991,63(2):79. |
APA | DUAN, XF,FUNG, KK,CHU, YM,SHENG, C,&ZHOU, GL.(1991).CONVERGENT-BEAM ELECTRON-DIFFRACTION STUDY OF GE0.5SI0.5/SI STRAINED-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY.PHILOSOPHICAL MAGAZINE LETTERS,63(2),79. |
MLA | DUAN, XF,et al."CONVERGENT-BEAM ELECTRON-DIFFRACTION STUDY OF GE0.5SI0.5/SI STRAINED-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY".PHILOSOPHICAL MAGAZINE LETTERS 63.2(1991):79. |
入库方式: OAI收割
来源:物理研究所
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