Converting Metallic Single-Walled Carbon Nanotnbes into Semiconductors by Boron/Nitrogen Co-Doping
文献类型：期刊论文
| 作者 | Xu, Z ; Lu, WG ; Wang, WL ; Gu, CZ ; Liu, KH ; Bai, XD ; Wang, EG ; Dai, HJ |
| 刊名 | ADVANCED MATERIALS
 |
| 出版日期 | 2008 |
| 卷号 | 20期号:19页码:3615 |
| 关键词 | NANOTUBES PLASMA BORON WIRES |
| ISSN号 | 0935-9648 |
| 通讯作者 | Bai, XD: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Electronic transport measurements on boron/nitrogen co-doped single-walled carbon nanotubes (BCN-SWNTs) have been performed to determine their metallic or semiconducting character. The results obtained from a large number of BCN-SWNT-based field-effect transistors indicate that the as-grown BCN-SWNTs are purely semiconducting, while the undoped C-SWNTs consist of only about 70% semiconducting nanotubes. |
| 收录类别 | SCI |
| 资助信息 | NSF [50725209, 60621091]; MOST [2007CB936203, 2007AA03Z353, 2006AA03Z402]; CAS of China |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/35174]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xu, Z,Lu, WG,Wang, WL,et al. Converting Metallic Single-Walled Carbon Nanotnbes into Semiconductors by Boron/Nitrogen Co-Doping[J]. ADVANCED MATERIALS,2008,20(19):3615. |
| APA | Xu, Z.,Lu, WG.,Wang, WL.,Gu, CZ.,Liu, KH.,...&Dai, HJ.(2008).Converting Metallic Single-Walled Carbon Nanotnbes into Semiconductors by Boron/Nitrogen Co-Doping.ADVANCED MATERIALS,20(19),3615. |
| MLA | Xu, Z,et al."Converting Metallic Single-Walled Carbon Nanotnbes into Semiconductors by Boron/Nitrogen Co-Doping".ADVANCED MATERIALS 20.19(2008):3615. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。