Correlation between evolution of resistive switching and oxygen vacancy configuration in La0.5Ca0.5MnO3 based memristive devices
文献类型：期刊论文
| 作者 | Wang, ZH ; Yang, Y ; Gu, L ; Habermeier, HU ; Yu, RC ; Zhao, TY ; Sun, JR ; Shen, BG |
| 刊名 | NANOTECHNOLOGY
 |
| 出版日期 | 2012 |
| 卷号 | 23期号:26 |
| 关键词 | TRANSITION-METAL OXIDES MECHANISM SRTIO3 |
| ISSN号 | 0957-4484 |
| 通讯作者 | Wang, ZH: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | We here report a study of the correlation between the evolution of resistive switching and the oxygen vacancy configuration in La0.5Ca0.5MnO3 (LCMO) based memristive devices. By taking advantage of LCMO located at a phase boundary of the metal-to-insulator transition, we observe the development of the high resistive states, depending upon not only the electrical pulse magnitude but also the switching cycles. We discuss the experimental results by an oxygen migration model that involves both single isolated and clustered oxygen vacancies, which are later verified using aberration-corrected scanning transmission electron microscopy. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [10774173, 1174353, 10974235]; National Basic Research Program of China; Beijing Natural Science Foundation |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/35212]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, ZH,Yang, Y,Gu, L,et al. Correlation between evolution of resistive switching and oxygen vacancy configuration in La0.5Ca0.5MnO3 based memristive devices[J]. NANOTECHNOLOGY,2012,23(26). |
| APA | Wang, ZH.,Yang, Y.,Gu, L.,Habermeier, HU.,Yu, RC.,...&Shen, BG.(2012).Correlation between evolution of resistive switching and oxygen vacancy configuration in La0.5Ca0.5MnO3 based memristive devices.NANOTECHNOLOGY,23(26). |
| MLA | Wang, ZH,et al."Correlation between evolution of resistive switching and oxygen vacancy configuration in La0.5Ca0.5MnO3 based memristive devices".NANOTECHNOLOGY 23.26(2012). |
入库方式： OAI收割
来源：物理研究所
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