Crosshatching on a SiGe film grown on a Si(001) substrate studied by Raman mapping and atomic force microscopy
文献类型：期刊论文
| 作者 | Chen, H ; Li, YK ; Peng, CS ; Liu, HF ; Liu, YL ; Huang, Q ; Zhou, JM ; Xue, QK |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2002 |
| 卷号 | 65期号:23 |
| 关键词 | ANOMALOUS STRAIN RELAXATION DISLOCATION-DENSITY SURFACE-MORPHOLOGY CROSS-HATCH BUFFER LAYER THIN-FILMS SUPERLATTICES ELECTRON PATTERN ALLOYS |
| ISSN号 | 1098-0121 |
| 通讯作者 | Chen, H: Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | The morphology, stress, and composition distributions of the crosshatch pattern on a SiGe film grown on a Si(001) substrate using a low-temperature Si buffer are studied by atomic force and Raman microscopies. Crosshatching is not related to composition fluctuation regardless of the stress undulation associated with strain relaxation in the SiGe film. The crosshatch morphology arises from vertical lattice relaxation induced by piled-up misfit dislocations in the Si buffer layer and substrate. A model for crosshatch formation is proposed. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/35311]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, H,Li, YK,Peng, CS,et al. Crosshatching on a SiGe film grown on a Si(001) substrate studied by Raman mapping and atomic force microscopy[J]. PHYSICAL REVIEW B,2002,65(23). |
| APA | Chen, H.,Li, YK.,Peng, CS.,Liu, HF.,Liu, YL.,...&Xue, QK.(2002).Crosshatching on a SiGe film grown on a Si(001) substrate studied by Raman mapping and atomic force microscopy.PHYSICAL REVIEW B,65(23). |
| MLA | Chen, H,et al."Crosshatching on a SiGe film grown on a Si(001) substrate studied by Raman mapping and atomic force microscopy".PHYSICAL REVIEW B 65.23(2002). |
入库方式： OAI收割
来源：物理研究所
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