中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Crossover between Weak Antilocalization and Weak Localization in a Magnetically Doped Topological Insulator

文献类型:期刊论文

作者Liu, MH ; Zhang, JS ; Chang, CZ ; Zhang, ZC ; Feng, X ; Li, K ; He, K ; Wang, LL ; Chen, X ; Dai, X ; Fang, Z ; Xue, QK ; Ma, XC ; Wang, YY
刊名PHYSICAL REVIEW LETTERS
出版日期2012
卷号108期号:3
关键词SINGLE DIRAC CONE SURFACE-STATES BI2SE3 BI2TE3
ISSN号0031-9007
通讯作者Liu, MH: Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China.
中文摘要We report transport studies on magnetically doped Bi(2)Se(3) topological insulator ultrathin films grown by molecular beam epitaxy. The magnetotransport behavior exhibits a systematic crossover between weak antilocalization and weak localization with the change of magnetic impurity concentration, temperature, and magnetic field. We show that the localization property is closely related to the magnetization of the sample, and the complex crossover is due to the transformation of Bi(2)Se(3) from a topological insulator to a topologically trivial dilute magnetic semiconductor driven by magnetic impurities. This work demonstrates an effective way to manipulate the quantum transport properties of the topological insulators by breaking time-reversal symmetry.
收录类别SCI
资助信息National Natural Science Foundation of China; Ministry of Science and Technology of China [2009CB929400]; Chinese Academy of Sciences
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/35314]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Liu, MH,Zhang, JS,Chang, CZ,et al. Crossover between Weak Antilocalization and Weak Localization in a Magnetically Doped Topological Insulator[J]. PHYSICAL REVIEW LETTERS,2012,108(3).
APA Liu, MH.,Zhang, JS.,Chang, CZ.,Zhang, ZC.,Feng, X.,...&Wang, YY.(2012).Crossover between Weak Antilocalization and Weak Localization in a Magnetically Doped Topological Insulator.PHYSICAL REVIEW LETTERS,108(3).
MLA Liu, MH,et al."Crossover between Weak Antilocalization and Weak Localization in a Magnetically Doped Topological Insulator".PHYSICAL REVIEW LETTERS 108.3(2012).

入库方式: OAI收割

来源:物理研究所

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