Crystal growth of AlN: Effect of SiC substrate
文献类型：期刊论文
| 作者 | Zuo, SB ; Chen, XL ; Jiang, LB ; Bao, HQ ; Wang, J ; Guo, LW ; Wang, WJ |
| 刊名 | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
 |
| 出版日期 | 2012 |
| 卷号 | 15期号:4页码:401 |
| 关键词 | BULK ALUMINUM NITRIDE SUBLIMATION GROWTH SINGLE-CRYSTALS NATIVE ALN NUCLEATION MORPHOLOGY EPITAXY |
| ISSN号 | 1369-8001 |
| 通讯作者 | Wang, WJ: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100190, Peoples R China. |
| 中文摘要 | The morphology of AlN crystal grown under the same growth conditions by the PVT method on four kinds of 4H-SiC substrates (SiC (0001), SiC (000 - 1), 8 degrees off-axis SiC (0001), and 8 degrees off-axis SiC (000 - 1), off-oriented from the basal plane toward the < 11-20 > direction) was investigated. It is found that the nucleation more easily occurs on the Si face substrate than on the C face substrate at 1800-1900 degrees C. Hexagonal flakes nucleated on the SiC (0001) substrate, while tetrahedral grains nucleated on the 8 degrees off-axis SiC (0001) substrate. AlN grown on the 8 degrees off-axis SiC (000 - 1) substrate was strikingly different, and flower pattern structure AlN deposited on the substrate. A stepped structure with smooth terraces was obtained on the 8 degrees off-axis SiC (0001) substrate at 1900 degrees C for 4 h. We conclude that the AIM grown on the 8 degrees off-axis SiC (0001) substrate was first by island nucleation then by the step-flow growth mode. (C) 2012 Elsevier Ltd. All rights reserved. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [50702073, 51172270]; National Basic Research Program of China (973 Program) [2007CB936300]; National High Technology Research and Development Program of China (863 Program) [2006AA03A107]; Chinese Academy of Sciences |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/35338]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zuo, SB,Chen, XL,Jiang, LB,et al. Crystal growth of AlN: Effect of SiC substrate[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2012,15(4):401. |
| APA | Zuo, SB.,Chen, XL.,Jiang, LB.,Bao, HQ.,Wang, J.,...&Wang, WJ.(2012).Crystal growth of AlN: Effect of SiC substrate.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,15(4),401. |
| MLA | Zuo, SB,et al."Crystal growth of AlN: Effect of SiC substrate".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 15.4(2012):401. |
入库方式： OAI收割
来源：物理研究所
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