Crystal orientation dependence of the dielectric properties for epitaxial BaZr0.15Ti0.85O3 thin films
文献类型：期刊论文
| 作者 | Miao, J ; Yuan, J ; Wu, H ; Yang, SB ; Xu, B ; Cao, LX ; Zhao, BR |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2007 |
| 卷号 | 90期号:2 |
| 关键词 | CRYSTALLOGRAPHIC ORIENTATION PIEZOELECTRIC PROPERTIES SINGLE-CRYSTALS HYSTERESIS ELECTRODES PB(ZR |
| ISSN号 | 0003-6951 |
| 通讯作者 | Zhao, BR: Chinese Acad Sci, Inst Phys, Natl Lab Superconduct, Beijing 100080, Peoples R China. |
| 中文摘要 | Epitaxial Ba0.15Zr0.85TiO3 (BZT) ferroelectric thin films with (001), (011), and (111) orientations were, respectively, grown on La0.67Sr0.33MnO3 (LSMO) buffered LaAlO3 substrates by pulsed laser deposition method. The dc electric-field dependence of permittivity and dielectric loss of (001)-, (011)-, and (111)-oriented BZT/LSMO heterostructures obeys the Johnson formula, and the ac electric-field dependence of that obeys the Rayleigh law under the subswitching field region. The anisotropic dielectric properties are attributed to the higher mobility of the charge carriers, the concentration of mobile interfacial domain walls, and boundaries in the (111)-oriental films than in the (110)- and (100)-oriented films. (c) 2007 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/35341]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Miao, J,Yuan, J,Wu, H,et al. Crystal orientation dependence of the dielectric properties for epitaxial BaZr0.15Ti0.85O3 thin films[J]. APPLIED PHYSICS LETTERS,2007,90(2). |
| APA | Miao, J.,Yuan, J.,Wu, H.,Yang, SB.,Xu, B.,...&Zhao, BR.(2007).Crystal orientation dependence of the dielectric properties for epitaxial BaZr0.15Ti0.85O3 thin films.APPLIED PHYSICS LETTERS,90(2). |
| MLA | Miao, J,et al."Crystal orientation dependence of the dielectric properties for epitaxial BaZr0.15Ti0.85O3 thin films".APPLIED PHYSICS LETTERS 90.2(2007). |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。