Crystallization of amorphous Si films by pulsed laser annealing and their structural characteristics
文献类型：期刊论文
| 作者 | Peng, YC ; Fu, GS ; Yu, W ; Li, SQ ; Wang, YL |
| 刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2004 |
| 卷号 | 19期号:6页码:759 |
| 关键词 | EXCIMER-LASER ABLATION PHASE GAS |
| ISSN号 | 0268-1242 |
| 通讯作者 | Peng, YC: Hebei Univ, Coll Elect & Informat Engn, Baoding 071002, Peoples R China. |
| 中文摘要 | Nanocrystalline silicon (nc-Si) films were prepared by pulsed laser annealed crystallization of amorphous silicon (alpha-Si) films on SiO2-coated quartz or glass substrates. The effect of laser energy density on structural characteristics of nc-Si films was investigated. The Ni-induced crystallization of the a-Si films was also discussed. The surface morphology and microstructure of these films were characterized by scanning electron microscopy, high-resolution electron microscopy, atomic force microscopy and Raman scattering spectroscopy. The results show that not only can the alpha-Si films be crystallized by the laser annealing technique, but also the size of Si nanocrystallites can be controlled by varying the laser energy density. Their average size is about 4-6 nm. We present a surface tension and interface strain model used for describing the laser annealed crystallization of the alpha-Si films. The doping of Ni atoms may effectively reduce the threshold value of laser energy density to crystallize the alpha-Si films, and the flocculent-like Si nanostructures could be formed by Ni-induced crystallization of the alpha-Si films. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/35450]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Peng, YC,Fu, GS,Yu, W,et al. Crystallization of amorphous Si films by pulsed laser annealing and their structural characteristics[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2004,19(6):759. |
| APA | Peng, YC,Fu, GS,Yu, W,Li, SQ,&Wang, YL.(2004).Crystallization of amorphous Si films by pulsed laser annealing and their structural characteristics.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,19(6),759. |
| MLA | Peng, YC,et al."Crystallization of amorphous Si films by pulsed laser annealing and their structural characteristics".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 19.6(2004):759. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。