Current-induced butterfly shaped domains and magnetization switching in magnetic tunnel junctions
文献类型：期刊论文
| 作者 | Han, XF ; Zhao, SF ; Yu, ACC |
| 刊名 | SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
 |
| 出版日期 | 2005 |
| 卷号 | 6期号:7页码:784 |
| 关键词 | CO75FE25 FERROMAGNETIC ELECTRODES MEMORY MAGNETORESISTANCE HEAD |
| ISSN号 | 1468-6996 |
| 通讯作者 | Han, XF: Chinese Acad Sci, State Key Lab Magnetism, Inst Phys, Beijing 100080, Peoples R China. |
| 中文摘要 | Patterned magnetic tunnel junctions (MTJs) with the layer structure of Ta (5 nm)/Ni79Fe21 (5 nm)/Cu (20 nm)/Ni79Fe21 (5 nm)/lr(22)Mn(78) (10nM)/CO75Fe25 (4 nm)/Al (0.8 nm)-oxide/CO75Fe25 (4 nm)/Ni79Fe21 (20 nm)/Ta (5 nm) were fabricated using magnetron sputtering deposition and lithography. High tunnelling magnetoresistance ratios of 22 and 50% were obtained at room temperature before and after annealing, respectively. The evolution of leaf shaped images was observed via Lorentz transmission electron microscopy (LTEM) on the MTJs, which were deposited on a patterned and carbon-coated transmission electron microscopy grid. These leaf-like LTEM images correspond to a butterfly shaped domain structure that was confirmed by a micromagnetics simulation. When a large DC current or bias voltage was applied across the MTJ, the butterfly-like vortex domain structures could be induced to form in the free layer of the MTJ, resulting in a significant decrease of magnetization in the free layer. The existence of these butterfly shaped domains could be one of the major causes of the bias voltage dependence of the TMR ratio. (c) 2005 Elsevier Ltd. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/35578]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Han, XF,Zhao, SF,Yu, ACC. Current-induced butterfly shaped domains and magnetization switching in magnetic tunnel junctions[J]. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS,2005,6(7):784. |
| APA | Han, XF,Zhao, SF,&Yu, ACC.(2005).Current-induced butterfly shaped domains and magnetization switching in magnetic tunnel junctions.SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS,6(7),784. |
| MLA | Han, XF,et al."Current-induced butterfly shaped domains and magnetization switching in magnetic tunnel junctions".SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 6.7(2005):784. |
入库方式： OAI收割
来源：物理研究所
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