中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Current-induced magnetization switching in a microscale ring-shaped magnetic tunnel junction

文献类型:期刊论文

作者Wei, HX ; Hickey, MC ; Anderson, GIR ; Han, XF ; Marrows, CH
刊名PHYSICAL REVIEW B
出版日期2008
卷号77期号:13
ISSN号1098-0121
中文摘要A current-induced magnetization switching has been observed in a microscale ring-shaped magnetic tunnel junction having an alumina barrier, which showed a tunneling magnetoresistance ratio of 37% and a resistance-area product of 175 Omega mu m(2). Several metastable magnetization states were observed during field driven switching of this junction. Preparing the junction in one of these metastable states allowed a current-induced switching to take place at current densities 2 orders of magnitude lower than conventional switching values. Micromagnetic modeling indicates that the effect was solely due to Oersted field switching, which explains the markedly different forms of the current- and field-driven hysteresis loops.
收录类别SCI
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/35580]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
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GB/T 7714
Wei, HX,Hickey, MC,Anderson, GIR,et al. Current-induced magnetization switching in a microscale ring-shaped magnetic tunnel junction[J]. PHYSICAL REVIEW B,2008,77(13).
APA Wei, HX,Hickey, MC,Anderson, GIR,Han, XF,&Marrows, CH.(2008).Current-induced magnetization switching in a microscale ring-shaped magnetic tunnel junction.PHYSICAL REVIEW B,77(13).
MLA Wei, HX,et al."Current-induced magnetization switching in a microscale ring-shaped magnetic tunnel junction".PHYSICAL REVIEW B 77.13(2008).

入库方式: OAI收割

来源:物理研究所

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