Current-induced magnetization switching in a microscale ring-shaped magnetic tunnel junction
文献类型:期刊论文
作者 | Wei, HX ; Hickey, MC ; Anderson, GIR ; Han, XF ; Marrows, CH |
刊名 | PHYSICAL REVIEW B
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出版日期 | 2008 |
卷号 | 77期号:13 |
ISSN号 | 1098-0121 |
中文摘要 | A current-induced magnetization switching has been observed in a microscale ring-shaped magnetic tunnel junction having an alumina barrier, which showed a tunneling magnetoresistance ratio of 37% and a resistance-area product of 175 Omega mu m(2). Several metastable magnetization states were observed during field driven switching of this junction. Preparing the junction in one of these metastable states allowed a current-induced switching to take place at current densities 2 orders of magnitude lower than conventional switching values. Micromagnetic modeling indicates that the effect was solely due to Oersted field switching, which explains the markedly different forms of the current- and field-driven hysteresis loops. |
收录类别 | SCI |
公开日期 | 2013-09-17 |
源URL | [http://ir.iphy.ac.cn/handle/311004/35580] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Wei, HX,Hickey, MC,Anderson, GIR,et al. Current-induced magnetization switching in a microscale ring-shaped magnetic tunnel junction[J]. PHYSICAL REVIEW B,2008,77(13). |
APA | Wei, HX,Hickey, MC,Anderson, GIR,Han, XF,&Marrows, CH.(2008).Current-induced magnetization switching in a microscale ring-shaped magnetic tunnel junction.PHYSICAL REVIEW B,77(13). |
MLA | Wei, HX,et al."Current-induced magnetization switching in a microscale ring-shaped magnetic tunnel junction".PHYSICAL REVIEW B 77.13(2008). |
入库方式: OAI收割
来源:物理研究所
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