中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Current-induced multiple spin structures in 100 nm ring magnetic tunnel junctions

文献类型:期刊论文

作者Wei, HX ; Zhu, FQ ; Han, XF ; Wen, ZC ; Chien, CL
刊名PHYSICAL REVIEW B
出版日期2008
卷号77期号:22
关键词FERROMAGNETIC NANORINGS ROOM-TEMPERATURE MAGNETORESISTANCE
ISSN号1098-0121
通讯作者Wei, HX: Chinese Acad Sci, State Key Lab Magnetism, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100080, Peoples R China.
中文摘要Nanoring magnetic tunnel junctions (NR-MTJs) with outer diameters as small as 100 nm and a thin wall width of 25 nm have been fabricated. NR-MTJs acquire different resistance states when they are switched by electrical currents compared with when they are switched by external magnetic fields. This can be explained by combining the effects of spin-transfer torque and circulatory Oersted field during current-induced switching. We provide a model for computing the equivalent circulatory magnetic field due to the nonadiabatic spin torque of the spin-polarized current through the MTJ. The multiple spin states in nanoring MTJs provide prospects for magnetic memory devices.
收录类别SCI
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/35581]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Wei, HX,Zhu, FQ,Han, XF,et al. Current-induced multiple spin structures in 100 nm ring magnetic tunnel junctions[J]. PHYSICAL REVIEW B,2008,77(22).
APA Wei, HX,Zhu, FQ,Han, XF,Wen, ZC,&Chien, CL.(2008).Current-induced multiple spin structures in 100 nm ring magnetic tunnel junctions.PHYSICAL REVIEW B,77(22).
MLA Wei, HX,et al."Current-induced multiple spin structures in 100 nm ring magnetic tunnel junctions".PHYSICAL REVIEW B 77.22(2008).

入库方式: OAI收割

来源:物理研究所

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