中国科学院机构知识库网格
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CVD diamond films: nucleation and growth

文献类型:期刊论文

作者Lee, ST ; Lin, ZD ; Jiang, X
刊名MATERIALS SCIENCE & ENGINEERING R-REPORTS
出版日期1999
卷号25期号:4页码:123
关键词CHEMICAL-VAPOR-DEPOSITION BIAS-ENHANCED NUCLEATION TRANSMISSION ELECTRON-MICROSCOPY MICROWAVE PLASMA THIN-FILMS ORIENTED DIAMOND EPITAXIAL-GROWTH HETEROEPITAXIAL NUCLEATION ION-IMPLANTATION 001 SILICON
ISSN号0927-796X
通讯作者Lee, ST: City Univ Hong Kong, Ctr Superdiamond & Adv Films, Hong Kong, Peoples R China.
中文摘要In the last decade, we have seen rapid developments in metastable diamond synthesis by means of low-pressure chemical vapor deposition. Concurrently, a fast growing interest in diamond technology has emerged. This review discusses the various low-pressure growth methods of diamond films. Particular attention is paid to recent advances in the understanding of the mechanism of diamond nucleation and metastable growth. These advances are discussed in connection with the advances in diamond heteroepitaxy, which raises hopes that single crystalline diamond films are not far beyond reach. Modern surface science techniques applied to diamond study have played an essential role in these achievements and their contributions are discussed. (C) 1999 Elsevier Science S.A. All rights reserved.
收录类别SCI
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/35603]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Lee, ST,Lin, ZD,Jiang, X. CVD diamond films: nucleation and growth[J]. MATERIALS SCIENCE & ENGINEERING R-REPORTS,1999,25(4):123.
APA Lee, ST,Lin, ZD,&Jiang, X.(1999).CVD diamond films: nucleation and growth.MATERIALS SCIENCE & ENGINEERING R-REPORTS,25(4),123.
MLA Lee, ST,et al."CVD diamond films: nucleation and growth".MATERIALS SCIENCE & ENGINEERING R-REPORTS 25.4(1999):123.

入库方式: OAI收割

来源:物理研究所

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