Damage accumulation and annealing behavior in high fluence implanted MgZnO
文献类型：期刊论文
| 作者 | Azarov, AY ; Hallen, A ; Svensson, BG ; Du, XL ; Kuznetsov, AY |
| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 2012 |
| 卷号 | 272页码:426 |
| 关键词 | ZNO SINGLE-CRYSTALS STABILITY TM |
| ISSN号 | 0168-583X |
| 通讯作者 | Azarov, AY: Univ Oslo, Dept Phys, POB 1048 Blindern, NO-0316 Oslo, Norway. |
| 中文摘要 | Molecular beam epitaxy grown MgxZn1-xO (x <= 0.3) layers were implanted at room temperature with 150 keV Er-166(+) ions in a fluence range of 5 x 10(15-)3 x 10(16) cm(-2). Evolution of ion-induced damage and structural changes were studied by a combination of Rutherford backscattering spectrometry, nuclear reaction analysis and time-of-flight elastic recoil detection analysis. Results show that damage production enhances in both Zn- and O-sublattices with increasing the Mg content in the MgZnO. However, MgZnO as well as pure ZnO exhibits a high degree of dynamic annealing and MgZnO can not be amorphized even at the highest ion fluence used. Annealing of heavily damaged ZnO leads to a strong surface erosion and thinning of the film. Increasing the Mg content suppresses the surface evaporation in high fluence implanted MgZnO but leads to a strong surface decomposition accompanied with a Mg-rich surface layer formation during post-implantation annealing. (C) 2011 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/35615]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Azarov, AY,Hallen, A,Svensson, BG,et al. Damage accumulation and annealing behavior in high fluence implanted MgZnO[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2012,272:426. |
| APA | Azarov, AY,Hallen, A,Svensson, BG,Du, XL,&Kuznetsov, AY.(2012).Damage accumulation and annealing behavior in high fluence implanted MgZnO.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,272,426. |
| MLA | Azarov, AY,et al."Damage accumulation and annealing behavior in high fluence implanted MgZnO".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 272(2012):426. |
入库方式： OAI收割
来源：物理研究所
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