DAMAGE FORMATION IN SI(100) INDUCED BY MEV SELF-ION IMPLANTATION
文献类型：期刊论文
| 作者 | ZHAO, QT ; WANG, ZL ; XU, TB ; ZHU, PR ; ZHOU, JS ; LIU, XD ; LIU, JT ; WANG, KM |
| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 1993 |
| 卷号 | 82期号:4页码:575 |
| ISSN号 | 0168-583X |
| 关键词 | DEPTH-PROFILES SILICON SI AMORPHIZATION ACCUMULATION IRRADIATION REDUCTION |
| 通讯作者 | ZHAO, QT: BEIJING UNIV,INST MICROELECTR,BEIJING 100871,PEOPLES R CHINA. |
| 中文摘要 | Damage formation in Si(100) induced by MeV self-ion implantation was studied using the Rutherford backscattering and channeling technique. Damage accumulations were found to be produced mainly near the ions' end of range. Two distinct regions were observed for dose dependence upon damage. One is for low doses, in which the damage increases slowly with dose. The second region is for high-dose implantation, in which the damage increases rapidly as the dose increases. Beam self-annealing was found in MeV Si ion implanted Si(100). The effects of the energy depositions on the defect production are also discussed. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/35620]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | ZHAO, QT,WANG, ZL,XU, TB,et al. DAMAGE FORMATION IN SI(100) INDUCED BY MEV SELF-ION IMPLANTATION[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,1993,82(4):575. |
| APA | ZHAO, QT.,WANG, ZL.,XU, TB.,ZHU, PR.,ZHOU, JS.,...&WANG, KM.(1993).DAMAGE FORMATION IN SI(100) INDUCED BY MEV SELF-ION IMPLANTATION.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,82(4),575. |
| MLA | ZHAO, QT,et al."DAMAGE FORMATION IN SI(100) INDUCED BY MEV SELF-ION IMPLANTATION".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 82.4(1993):575. |
入库方式： OAI收割
来源：物理研究所
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