DAMAGE PROFILES IN SILICON INDUCED BY 1.0 MEV TI IONS AT TILTED ANGLE INCIDENCE
文献类型：期刊论文
| 作者 | WANG, KM ; SHI, BR ; LIU, XD ; XU, TB ; ZHU, PR ; ZHOU, JS ; ZHAO, QT |
| 刊名 | PHYSICS LETTERS A
 |
| 出版日期 | 1992 |
| 卷号 | 166期号:5-6页码:361 |
| ISSN号 | 0375-9601 |
| 通讯作者 | WANG, KM: SHANDONG UNIV,DEPT PHYS,JINAN 250100,PEOPLES R CHINA. |
| 中文摘要 | P-type silicon crystal has been irradiated at room temperature by 1.0 MeV Ti ions at tilted angle incidence in order to study the damage profiles. The irradiation was performed to a dose of 5 X 10(14) ions/cm2 under different tilted angles: 7-degrees, 30-degrees, 45-degrees and 60-degrees. The Rutherford backscattering (RBS) /channeling technique of 2.1 MeV He ions has been used in order to obtain information on the damage profiles. The damage profiles extracted are compared with the transport of ions in matter (TRIM'89). The result shows that the damage profiles seem to be in good agreement with the TRIM'89 prediction. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/35621]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | WANG, KM,SHI, BR,LIU, XD,et al. DAMAGE PROFILES IN SILICON INDUCED BY 1.0 MEV TI IONS AT TILTED ANGLE INCIDENCE[J]. PHYSICS LETTERS A,1992,166(5-6):361. |
| APA | WANG, KM.,SHI, BR.,LIU, XD.,XU, TB.,ZHU, PR.,...&ZHAO, QT.(1992).DAMAGE PROFILES IN SILICON INDUCED BY 1.0 MEV TI IONS AT TILTED ANGLE INCIDENCE.PHYSICS LETTERS A,166(5-6),361. |
| MLA | WANG, KM,et al."DAMAGE PROFILES IN SILICON INDUCED BY 1.0 MEV TI IONS AT TILTED ANGLE INCIDENCE".PHYSICS LETTERS A 166.5-6(1992):361. |
入库方式： OAI收割
来源：物理研究所
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