Debye temperature of 4H-SiC determined by X-ray powder diffraction
文献类型：期刊论文
| 作者 | Peng, TH ; Lou, YF ; Jin, SF ; Wang, WY ; Wang, WJ ; Wang, G ; Chen, XL |
| 刊名 | POWDER DIFFRACTION
 |
| 出版日期 | 2009 |
| 卷号 | 24期号:4页码:311 |
| 关键词 | SIC BULK CRYSTAL SILICON-CARBIDE SUBLIMATION GROWTH PVT METHOD GRAPHITIZATION REFINEMENT |
| ISSN号 | 0885-7156 |
| 通讯作者 | Chen, XL: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100190, Peoples R China. |
| 中文摘要 | Crystal structure of 4H-SiC was refined from room-temperature X-ray powder diffraction data using the Rietveld refinement method. The refined lattice constants were determined to be a=b=3.079 93(0) angstrom, c=10.082 22(2) angstrom, and the refined overall temperature factor B=0.383(3) angstrom(2). Using the Debye approximation, the Debye temperature was successfully determined to be 1194.8 K. (C) 2009 International Centre for Diffraction Data. [DOI: 10.1154/1.3257905] |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of PR China [50702073 and 50872144]; "973" Project [2007CB936300]; National High Technology Research and Development Program of China [2006AA03A107, 2006AA03A146]; Chinese Academy of Sciences |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/35632]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Peng, TH,Lou, YF,Jin, SF,et al. Debye temperature of 4H-SiC determined by X-ray powder diffraction[J]. POWDER DIFFRACTION,2009,24(4):311. |
| APA | Peng, TH.,Lou, YF.,Jin, SF.,Wang, WY.,Wang, WJ.,...&Chen, XL.(2009).Debye temperature of 4H-SiC determined by X-ray powder diffraction.POWDER DIFFRACTION,24(4),311. |
| MLA | Peng, TH,et al."Debye temperature of 4H-SiC determined by X-ray powder diffraction".POWDER DIFFRACTION 24.4(2009):311. |
入库方式： OAI收割
来源：物理研究所
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